Abstract For screen-printed silicon solar cells, optimization of the contact characteristics between the front metal electrode and silicon is very significant for realizing high efficiency. As technology advances, the solar cell efficiency has been steadily increased. Especially, as surface recombination becomes more important in high efficiency solar cells, understanding and controlling recombination in the metal contact area are necessary. Recombination at the metal-silicon interface is a major cause of the drop in the open-circuit voltage (Voc) of a solar cell. Thus far, the study of electrodes in silicon solar cells has been largely aimed at reducing the series resistance, and few studies on recombination due to electrodes have been performed. Quantitatively evaluating the recombination in electrodes to assess the effect on the efficiency is expected to become more important in the near future. In this paper, the contact characteristics of a screen-printed silver electrode and silicon interface were analyzed using saturation current density (Jo) measurements according to the surface doping concentration and firing temperature. The effects of the contact characteristics on Voc and recombination were also investigated. Experimental results showed that Jo.pass decreased with decreasing surface doping concentration and Jo.metal increased with increasing surface doping concentration and firing temperature. For quantitative analysis of Jo.metal, the size and distribution of Ag crystallites were observed using SEM and TEM, and the Ag concentration was analyzed by ICP-OES measurements. The larger Jo.metal was, the higher the Ag crystallite concentration, indicating that the Ag crystallites under the electrode increased Jo.metal. The effect of Jo.metal on the electrical characteristics of the solar cell was analyzed by calculating the change in the surface recombination velocity and the decreased width of Voc. Through this study, the recombination in the metallized area, which is expected to become increasingly important, and particularly the effects of the doping profile of the emitter region and silver crystallites on the surface recombination were quantitatively assessed. The amount of silver crystallites on the silicon wafer was quantitatively analyzed.

中文翻译：

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晶体硅太阳能电池金属-硅界面开路电压与复合损耗的相关性

摘要 对于丝网印刷硅太阳能电池，优化正面金属电极与硅之间的接触特性对于实现高效率具有重要意义。随着技术的进步，太阳能电池的效率一直在稳步提高。特别是，由于表面复合在高效太阳能电池中变得越来越重要，因此需要了解和控制金属接触区域的复合。金属-硅界面处的复合是太阳能电池开路电压 (Voc) 下降的主要原因。迄今为止，硅太阳能电池中电极的研究主要以降低串联电阻为目标，很少有关于电极复合的研究。预计在不久的将来，定量评估电极中的复合以评估对效率的影响将变得更加重要。在本文中，根据表面掺杂浓度和烧制温度，使用饱和电流密度 (Jo) 测量来分析丝网印刷银电极和硅界面的接触特性。还研究了接触特性对 Voc 和重组的影响。实验结果表明，Jo.pass随着表面掺杂浓度的降低而降低，Jo.metal随着表面掺杂浓度和烧成温度的增加而增加。对于 Jo.metal 的定量分析，使用 SEM 和 TEM 观察 Ag 微晶的大小和分布，并通过 ICP-OES 测量分析 Ag 浓度。Jo.metal 越大，Ag 微晶浓度越高，表明电极下的 Ag 微晶增加了 Jo.metal。通过计算表面复合速度的变化和Voc减小的宽度，分析了Jo.metal对太阳能电池电学特性的影响。通过这项研究，金属化区域的复合预计将变得越来越重要，特别是发射区和银微晶的掺杂分布对表面复合的影响进行了定量评估。定量分析硅晶片上银微晶的量。通过计算表面复合速度的变化和Voc减小的宽度来分析金属对太阳能电池电特性的影响。通过这项研究，金属化区域的复合预计将变得越来越重要，特别是发射区和银微晶的掺杂分布对表面复合的影响进行了定量评估。定量分析硅晶片上银微晶的量。通过计算表面复合速度的变化和Voc减小的宽度来分析金属对太阳能电池电特性的影响。通过这项研究，金属化区域的复合预计将变得越来越重要，特别是发射区和银微晶的掺杂分布对表面复合的影响进行了定量评估。定量分析硅晶片上银微晶的量。尤其是对发射区和银微晶的掺杂分布对表面复合的影响进行了定量评估。定量分析硅晶片上银微晶的量。尤其是对发射区和银微晶的掺杂分布对表面复合的影响进行了定量评估。定量分析硅晶片上银微晶的量。