The energy band position and conductivity of electron transport layers (ETLs) are essential factors that restrict the efficiency of planar perovskite solar cells (p‐PSCs). Tin oxide (SnO₂) has become a primary material in ETLs due to its mild synthesis condition, but its low conduction band position and limited intrinsic carriers are disadvantageous in electron transport. To solve these problems, this work exquisitely designs a Zr/F co‐doped SnO₂ ETL. The doping of Zr can raise the conduction band of SnO₂, which reduces the energy barrier in electron extraction and inhibits the interface recombination between the ETL and perovskite. The open‐circuit voltage (V_OC) of p‐PSCs consequently increases. F⁻ doping belongs to n‐type doping. Thus, it equips SnO₂ with a large number of free electrons and improves the conductivity of the ETL and short‐circuit current (J_SC). The device based on Zr/F co‐doped ETL achieves a high efficiency of 19.19% and exhibits a reduced hysteresis effect, which is more satisfactory than that of a pristine device (17.35%). Overall, this research successfully adjusts the energy band match and boosts the conductivity of ETL via Zr/F co‐doping. The results provide an effective strategy for fabricating high‐efficiency p‐PSCs.

中文翻译：

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用于高效平面钙钛矿太阳能电池的低温处理Zr / F共掺杂SnO2电子传输层

电子传输层（ETL）的能带位置和电导率是限制平面钙钛矿太阳能电池（p-PSC）效率的重要因素。氧化锡（SnO ₂）由于其温和的合成条件而已成为ETL中的主要材料，但是其低的导带位置和有限的本征载流子在电子传输中是不利的。为了解决这些问题，这项工作精心设计了Zr / F共掺杂的SnO ₂ ETL。Zr的掺杂可提高SnO ₂的导带，从而降低电子提取中的能垒，并抑制ETL和钙钛矿之间的界面复合。因此，p-PSC的开路电压（V _OC）增加。˚F ^-掺杂属于n型掺杂。因此，它为SnO ₂配备了大量自由电子，并提高了ETL的电导率和短路电流（J _SC）。基于Zr / F共掺杂ETL的器件可实现19.19％的高效率，并具有降低的磁滞效应，这比原始器件（17.35％）更令人满意。总体而言，这项研究成功地调整了能带匹配，并通过Zr / F共掺杂提高了ETL的电导率。结果为制造高效p-PSC提供了有效的策略。