Ionic gating is known as a powerful tool for investigation of electronic functionalities stemming from low voltage transistor operation to gate-induced electronic phase control including superconductivity. Two-dimensional (2D) material is one of the archetypal channel materials which exhibit a variety of gate-induced phenomena. Nevertheless, the device simulations on such ion-gated transistor devices have never been reported, despite its importance for the future design of device structures. In this paper, we developed a drift-diffusion (DD) model on a 2D material, WSe₂ monolayer, attached with an ionic liquid, and succeeded in simulating the transport properties, potential profile, carrier density distributions in the transistor configuration. In particular, the simulation explains the ambipolar behavior with the gate voltage comparable to the band gap energy, as well as the formation of p-n junctions in the channel reported in several experimental papers. Such peculiar behavior becomes possible by the dramatic change of the potential profiles at the Schottky barrier by the ionic gating. The present result indicates that the DD model coupled to the Poisson equation is a fascinating platform to explain and predict further functionalities of ion-gated transistors through including the spin, valley, and optical degrees of freedom.

离子门控是一种强大的工具，可用于研究从低压晶体管工作到栅极感应的电子相控制（包括超导性）的电子功能。二维（2D）材料是原型通道材料中的一种，它表现出多种由栅极引起的现象。然而，尽管这种离子门控晶体管器件的器件仿真对于器件结构的未来设计很重要，但从未有过报道。在本文中，我们开发了一种基于二维材料WSe ₂的漂移扩散（DD）模型单层，附着有离子液体，并成功地模拟了晶体管配置中的传输特性，电势分布，载流子密度分布。尤其是，该仿真解释了双极行为，其栅极电压与带隙能量相当，并且在一些实验论文中报道了通道中pn结的形成。通过离子门控在肖特基势垒处的电位分布发生巨大变化，这种特殊的行为成为可能。目前的结果表明，与泊松方程耦合的DD模型是一个引人入胜的平台，可以通过解释自旋，谷值和光学自由度来解释和预测离子门控晶体管的进一步功能。