Abstract –Cadmium Zinc Telluride (CZT) is tertiary semiconductor material that has numerous applications in photonics, Opto-electronics, and photovoltaics due to its tunable direct band gap of 1.4eV–2.26eV. This bandgap can be altered by varying the elementary concentrations of Cadmium Telluride (CdTe) and Zinc Telluride (ZnTe). There are several different techniques that are used to grow CZT on different substrates. In this study, we have employed two different techniques, Electron Beam Evaporation (E-Beam) process and Resistive Heating (R-Heating) technique, and investigated the variance in the electrical characteristics of CZT matrixes fabricated by these two techniques. We have grown 1 μm thick Cd1-xZnxTe (x = 0, 0.25, 0.5, 0.75, 1) thin films and performed comparative analysis of each sample with its respective growth technique. After fabrication we have analyzed Current Voltage (I–V), Charge Deep Level Transient Spectroscopy (Q-DLTS), Transient of Photo-voltage (TPV), trap analysis for the determination of overall activation energy, deep level traps and their locations within the energy band picture, trap assisted capture cross sections, deep level trapping densities, their comparative ratios (I R-Heating/I E-beam) and provided their comparative nurture case wise. Our analysis revealed that ZnTe sample are least effected by the deposition technique whereas CdTe samples are most effected when deposited by different techniques. We have found that trap centers are present in each fabricated sample and all are above the fermi level. The trap level placed nearer to the conduction band edge has higher capture cross sections than those placed far from the conduction band edge. Trap level energies are ranging from this to this with capture cross sections of this to this, respectively. The trap centers are also requalified from the TPV measurements i.e. lower trap energies provide higher potential and vice-versa.

中文翻译：

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基于电荷分析的器件沉积技术对 CdZnTe 薄膜基体工艺优化的影响

摘要 – 镉锌碲化物 (CZT) 是一种三级半导体材料，由于其 1.4eV-2.26eV 的可调谐直接带隙，在光子学、光电和光伏领域具有广泛的应用。该带隙可以通过改变碲化镉 (CdTe) 和碲化锌 (ZnTe) 的元素浓度来改变。有几种不同的技术可用于在不同基板上生长 CZT。在这项研究中，我们采用了两种不同的技术，即电子束蒸发 (E-Beam) 工艺和电阻加热 (R-Heating) 技术，并研究了通过这两种技术制造的 CZT 矩阵的电特性变化。我们已经生长了 1 μm 厚的 Cd1-xZnxTe (x = 0, 0.25, 0.5, 0.75, 1) 薄膜，并使用各自的生长技术对每个样品进行了比较分析。制造后，我们分析了电流电压 (I-V)、电荷深能级瞬态光谱 (Q-DLTS)、光电压瞬变 (TPV)、用于确定总活化能的陷阱分析、深能级陷阱及其在内部的位置能带图片、陷阱辅助捕获横截面、深能级陷阱密度、它们的比较比率（I R-加热/I 电子束）并提供了它们的比较培育案例。我们的分析表明，ZnTe 样品受沉积技术的影响最小，而 CdTe 样品在通过不同技术沉积时受到的影响最大。我们发现每个制造的样品中都存在陷阱中心，并且都在费米能级以上。靠近导带边缘的陷阱能级比远离导带边缘的陷阱能级具有更高的捕获截面。陷阱能级能量范围从这个到这个，捕获截面分别从这个到这个。陷阱中心也通过 TPV 测量重新鉴定，即较低的陷阱能量提供较高的电位，反之亦然。