Magnetic information storage has been achieved by controlling and sensing the magnetic moment orientation of nanoscale ferromagnets. Recently, there has been concentrated effort to utilize materials with antiferromagnetic coupling as a storage medium to realize devices that switch faster, are more secure against external magnetic fields, and have higher storage density. Within this class of materials are ferrimagnets, whose magnetization can be reduced to zero by tuning parameters such as the chemical composition, temperature, and strain. Compared to conventional antiferromagnets, compensated ferrimagnets not only possess the aforementioned speed and density advantages but also allow the use of convenient electrical reading and writing mechanisms due to the existence of inequivalent magnetic sublattices. Recent research has demonstrated fast spin-torque switching, as well as efficient electrical reading with compensated ferrimagnets. Further material and device research using these zero-moment magnets promises a spintronic platform for fast and energy efficient information storage technology.

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具有补偿亚铁磁体的自旋电子学

通过控制和感测纳米级铁磁体的磁矩取向，已经实现了磁信息存储。最近，人们集中努力利用具有反铁磁耦合的材料作为存储介质来实现开关速度更快、更安全地抵抗外部磁场并具有更高存储密度的设备。此类材料中有亚铁磁体，通过调整化学成分、温度和应变等参数，可以将其磁化强度降低到零。与传统的反铁磁体相比，补偿亚铁磁体不仅具有上述速度和密度优势，而且由于存在不等价的磁性亚晶格，还允许使用方便的电读写机制。最近的研究已经证明了快速自旋扭矩切换，以及使用补偿亚铁磁体的高效电读数。使用这些零力矩磁铁的进一步材料和设备研究有望为快速和节能的信息存储技术提供一个自旋电子平台。