The compliant behavior of high fill-factor 10 × 10 μm2 square patterned 60–140 nm thick GaN-on-porous-GaN tiles was demonstrated by utilizing porous GaN as a semi-flexible underlayer. High resolution x-ray diffraction measurements showed a larger a-lattice constant of InGaN layers deposited on these patterned GaN-on-porous GaN pseudo-substrates in comparison to those deposited on co-loaded planar GaN-on-sapphire templates. Additionally, InGaN based light emitting diode (LED) structures deposited on these GaN pseudo-substrates exhibited room temperature electroluminescence at 547 nm compared to 506 nm for the LED structures grown on co-loaded planar GaN on sapphire templates, corresponding to a redshift of around 40 nm. The longer emission wavelength was associated with the higher indium incorporation into the InGaN quantum wells deposited on the compliant GaN pseudo-substrates, owing to a reduced lattice mismatch between the quantum well and the n-InGaN base layers grown on the compliant pseudo-substrates, due to the composition pulling effect.

中文翻译：

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在微米尺寸的图案化顺应性 GaN 伪衬底上生长应变弛豫 InGaN

通过使用多孔 GaN 作为半柔性底层，证明了高填充因子 10 × 10 μm2 方形图案化 60-140 nm 厚 GaN 多孔 GaN 瓷砖的合规行为。高分辨率 X 射线衍射测量显示，与沉积在共载平面 GaN-on-sapphire 模板上的 InGaN 层相比，沉积在这些图案化的 GaN-on-porous GaN 伪衬底上的 InGaN 层的晶格常数更大。此外，沉积在这些 GaN 伪衬底上的基于 InGaN 的发光二极管 (LED) 结构在 547 nm 处表现出室温电致发光，而在蓝宝石模板上共载平面 GaN 上生长的 LED 结构则为 506 nm，对应于大约40 纳米。