Abstract Sr0.8Bi2.2Ta2O9 (SBT) ferroelectric and HfO2 dielectric layers were successively deposited onto the p-type (100) Si substrate via RF sputtering. Metal-Ferroelectric-Insulator-Silicon (MFIS) capacitors were fabricated with 200 nm SBT and 10 nm HfO2 film shows the improved memory window of 1.811 V as compared to the 1.27 V in Metal-Ferroelectric-Silicon (MFS) structures. Improvement in leakage current and breakdown voltage was also observed in the MFIS structures as compared to the MFS structures. Degradation of ferroelectric polarization was not pronounced even after applying 8 × 1012 bipolar cycles in MF(200nm)I(10nm)S structures and the device shows significant data retention time of more than 2.5 hours.

中文翻译：

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在硅衬底上集成 Sr0.8Bi2.2Ta2O9/HfO2 铁电/介电复合膜，用于非易失性存储器应用

摘要 Sr0.8Bi2.2Ta2O9 (SBT) 铁电和 HfO2 介电层通过射频溅射连续沉积到 p 型 (100) Si 衬底上。金属铁电绝缘体硅 (MFIS) 电容器由 200 nm SBT 和 10 nm HfO2 薄膜制成，与金属铁电硅 (MFS) 结构中的 1.27 V 相比​​，显示出 1.811 V 的改进存储窗口。与 MFS 结构相比，在 MFIS 结构中还观察到漏电流和击穿电压的改善。即使在 MF(200nm)I(10nm)S 结构中应用 8 × 1012 双极循环后，铁电极化的退化也不明显，并且该器件显示出超过 2.5 小时的显着数据保留时间。