Abstract The La2/3Cu3Ti4O12 (LCTO) ceramic samples with a higher permittivity were prepared by the sol-gel technique. The study indicated that the effects of dc bias on grain boundaries electrical properties were very evident, but the grain electrical properties were independent of dc bias. The dielectric constant decreased whereas the dielectric loss increased with increasing of dc bias, and the resistances and the activation energies of grain boundaries decreased. According to the analysis of impedance and the I–V curve, there was a potential barrier existed at the grain boundaries of LCTO ceramic samples, which be considered as the Schottky potential barriers.

中文翻译：

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La2/3Cu3Ti4O12 陶瓷的介电特性和阻抗与直流偏置和 I-V 特性

摘要 采用溶胶-凝胶技术制备了具有较高介电常数的La2/3Cu3Ti4O12(LCTO)陶瓷样品。研究表明，直流偏压对晶界电性能的影响非常明显，但晶粒电性能与直流偏压无关。随着直流偏置的增加，介电常数降低，而介电损耗增加，晶界电阻和活化能降低。根据阻抗和 I-V 曲线分析，LCTO 陶瓷样品的晶界处存在势垒，这被认为是肖特基势垒。