AlGaN/GaN high-electron-mobility transistors (HEMTs) with Hr_0.5 Zr_0.5O₂ ferroelectric gate stacks exhibiting significant ferroelectric switching for threshold voltage control are experimentally demonstrated. Ferroelectric gate HEMTs (FeHEMTs) with large threshold voltage tuning range of 2.8 V were obtained, with an on/off ratio of $\sim {10}^{{{5}}}$ based on a GaN-channel HEMT structure suitable for RF applications. Improved subthreshold performance has also been achieved compared to conventional MIS-HEMTs, with reduction in average sub-threshold swing (SS_avg) by a factor of 2. As a consequence of the significant ferroelectric polarization achieved on AlGaN/GaN heterostructures, Hr_0.5 Zr_0.5O₂ based ferroelectric gate AlGaN/GaN HEMTs appear promising for nonvolatile and reconfigurable RF and microwave applications.

中文翻译：

---

具有大阈值电压调谐范围的 Hf0.5Zr0.5O2 基铁电栅极 HEMT (FeHEMT)

实验证明了具有 Hr _0.5 Zr _0.5 O ₂铁电栅堆叠的AlGaN/GaN 高电子迁移率晶体管 (HEMT)，显示出用于阈值电压控制的显着铁电开关。获得了具有 2.8 V 大阈值电压调谐范围的铁电栅极 HEMT (FeHEMT)，开/关比为 $\sim {10}^{{{5}}}$ 基于适用于射频应用的 GaN 沟道 HEMT 结构。与传统的 MIS-HEMT 相比，亚阈值性能也有所提高，平均亚阈值摆幅 (SS _avg ) 降低了 2 倍。 由于在 AlGaN/GaN 异质结构上实现了显着的铁电极化，Hr _0.5 Zr基于_0.5 O ₂的铁电栅极 AlGaN/GaN HEMT 似乎有望用于非易失性和可重构射频和微波应用。