当前位置: X-MOL 学术IEEE Electron Device Lett. › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Improvement of Resistive Switching Characteristics in Zinc Oxide-Based Resistive Random Access Memory by Ammoniation Annealing
IEEE Electron Device Letters ( IF 4.9 ) Pub Date : 2020-03-01 , DOI: 10.1109/led.2020.2968629
Pei-Yu Wu , Hao-Xuan Zheng , Chih-Cheng Shih , Ting-Chang Chang , Wei-Jang Chen , Chih-Cheng Yang , Wen-Chung Chen , Mao-Chou Tai , Yung-Fang Tan , Hui-Chun Huang , Xiao-Hua Ma , Yue Hao , Tsung-Ming Tsai , Simon M. Sze

In this experiment, the electrical performance of zinc oxide based-resistive random access memory (RRAM) is successfully improved by using annealing in ammonia hydroxide solution at low-temperature and high pressure to complete ammonium-doped ZnO based-RRAM. The results of material analysis indicate that using CO2 as ammonia hydroxide carrier during the annealing process leads to the reduction in dangling bond density. This can be clearly observed in the decrease in breakdown voltage during the forming process and a lower operating current during operation. Furthermore, in this ammonium-doped ZnO based-RRAM, we study the molecular doping of NH3 in ZnO, where the endurance and retention properties are improved as well. These improvements can be attributed to the higher concentration of nitrogen in the switching layer, which can effectively control the active oxygen ions during the operation process.

中文翻译:

通过氨化退火改善氧化锌基电阻式随机存取存储器的电阻开关特性

本实验通过在氢氧化氨溶液中低温高压退火,成功地提高了氧化锌基电阻式随机存取存储器(RRAM)的电学性能,完成了掺杂铵的ZnO基-RRAM。材料分析结果表明,在退火过程中使用CO2作为氢氧化氨载体导致悬键密度降低。这可以从成型过程中击穿电压的降低和操作过程中较低的工作电流中清楚地观察到。此外,在这种基于铵掺杂的 ZnO 的 RRAM 中,我们研究了 NH3 在 ZnO 中的分子掺杂,其中耐久性和保留性能也得到了改善。这些改进可归因于开关层中更高的氮浓度,
更新日期:2020-03-01
down
wechat
bug