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Low-Profile Broadband Absorber Based on Multimode Resistor-Embedded Metallic Strips
IEEE Transactions on Microwave Theory and Techniques ( IF 4.3 ) Pub Date : 2020-03-01 , DOI: 10.1109/tmtt.2019.2956933
Binchao Zhang , Cheng Jin , Zhongxiang Shen

This article proposes a new method to realize a low-profile broadband absorber. The unit cell of the proposed absorber consists of two layers: a lossy layer with four rotationally symmetric bent metallic strips embedded with two chip-resistors, which is modified from a doubly fed dipole antenna, and a metallic ground separated from the lossy layer by an air spacer. Three resonant modes of the metallic strip embedded with two chip-resistors are generated, and the current in the strip passes through the chip-resistors under different modes and it is finally consumed, resulting in energy dissipation. As a result, an ultrawideband absorber is realized. The designed absorber is fabricated and measured, and the measured absorption band with a fractional bandwidth of 127.9% is achieved for at least 10-dB reflectivity reduction under the normal incidence. In addition, the thickness of the designed absorber is only $0.08\lambda _{L}$ , where $\lambda _{L}$ is the wavelength at the lowest operating frequency.

中文翻译:

基于多模电阻嵌入金属条的薄型宽带吸收器

本文提出了一种实现低剖面宽带吸收体的新方法。所提出的吸收器的单位单元由两层组成:一个有四个旋转对称弯曲金属条的有损层嵌入了两个芯片电阻器,这是从双馈偶极天线修改而来的,以及一个与有损层隔开的金属接地层空气间隔。嵌入两个片式电阻器的金属条产生三种谐振模式,金属条中的电流在不同模式下通过片式电阻器最终被消耗,从而导致能量耗散。结果,实现了超宽带吸收器。设计的吸收器被制造和测量,并且在垂直入射下实现至少 10-dB 反射率降低的具有 127.9% 分数带宽的测量吸收带。 $0.08\lambda _{L}$ , 在哪里 $\lambda _{L}$ 是最低工作频率下的波长。
更新日期:2020-03-01
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