All-optical switching and multiple logic gates are experimentally demonstrated using AlGaInAs/InP hybrid square-rectangular lasers. Controllable bistability induced by saturable absorption in the square microcavity is achieved around the threshold with the square cavity in an open circuit state. Based on the bistability, all-optical switching operation is realized by injecting set/reset optical signals with the wavelengths around the lasing mode of 1529.9 nm and another high-Q mode at 1560 nm. Furthermore, mode competitions between three resonant modes around 1541 nm with an interval of 1.2 nm are used to realize all-optical multiple logic gates of NOT, NOR, and NAND functions under low-power optical pulses, with injecting currents to the square and rectangular sections. The static extinction ratio of 34, 40 and 24 dB are obtained for NOT, NOR, and NAND gates, respectively, and the dynamic extinction ratio over 10 dB of NOT function at 15 Gb/s, NOR and NAND functions at 2 Gb/s are demonstrated. With the merits of multifunctional operations, large optical injection wavelength tolerant ranges, low power consumption, small footprint and suitability for on-chip integration, the device offers a potential solution for all-optical signal processing in photonic integration circuits.

中文翻译：

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基于混合方矩形激光器的全光开关和多逻辑门

使用 AlGaInAs/InP 混合方形-矩形激光器实验证明了全光开关和多个逻辑门。由方形微腔中的饱和吸收引起的可控双稳态是在阈值附近实现的，方形腔处于开路状态。基于双稳态，通过注入波长在 1529.9 nm 激光模式附近和另一个高 Q 模式在 1560 nm 的设置/复位光信号来实现全光开关操作。此外，利用1541nm左右、间隔1.2nm的三种谐振模式之间的模式竞争，实现低功率光脉冲下的NOT、NOR、NAND功能的全光多逻辑门，向正方形和长方形注入电流部分。对于 NOT、NOR、分别展示了与非门和与非门，以及在 15 Gb/s 下的非功能、2 Gb/s 下的 NOR 和与非功能超过 10 dB 的动态消光比。该器件具有多功能操作、大的光注入波长容限范围、低功耗、小尺寸和适合片上集成的优点，为光子集成电路中的全光信号处理提供了潜在的解决方案。