We present the fabrication and characterization of an array of microbridge-structured magnetoelectric (ME) thin film sensors which are constructed by an ME composite consisting of a 1 $\mu \text{m}$ PZT film and a 1 $\mu \text{m}$ amorphous FeCoSiB film deposited on a partially thinned Si substrate. Characterization of the sensor showed a large ME coefficient of $16.87~\text {V/cm}\cdot \text {Oe}$ in resonance at 7.9 kHz without a charge amplifier. The sensitivity was enhanced by 1.65 times when three identical sensors were connected in series. The resonant frequency of the sensor was precisely regulated by adjusting the etched area of the substrate, and the 3 dB bandwidth of the resonant frequency was doubled after two adjusted sensors were connected in parallel.

中文翻译：

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基于 PZT/FeCoSiB 薄膜的微桥结构磁电传感器阵列

我们介绍了微桥结构磁电 (ME) 薄膜传感器阵列的制造和表征，这些传感器由 ME 复合材料构成，由 1 $\mu \text{m}$ PZT 薄膜和一个 1 $\mu \text{m}$ 非晶 FeCoSiB 薄膜沉积在部分减薄的 Si 衬底上。传感器的表征显示大的 ME 系数为 $16.87~\text {V/cm}\cdot \text {Oe}$ 在没有电荷放大器的情况下在 7.9 kHz 谐振。当三个相同的传感器串联时，灵敏度提高了 1.65 倍。通过调整基板的蚀刻面积来精确调节传感器的谐振频率，将两个调整后的传感器并联后，谐振频率的3 dB带宽增加一倍。