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Secondary Silicon Carbide Formed in the Interaction of Nanosized Silicon Carbide with Iron Oxide
Powder Metallurgy and Metal Ceramics ( IF 1 ) Pub Date : 2020-01-01 , DOI: 10.1007/s11106-020-00106-z
Ya.G. Tymoshenko , M.P. Gadzyra , N.K. Davydchuk

The characteristics of superfine powder composites formed in the interaction of nanosized silicon carbide with iron oxide in vacuum and argon at 1200 and 1400°C, respectively, are analyzed. Silicon carbide (β-SiC), iron silicide and carbide, silicon oxide, and silicon oxynitride are main components of the powder composites. The lattice parameter of SiC in the powder composites synthesized in the SiC–Fe 2 O 3 system is determined. In the interaction in the SiC–Fe 2 O 3 powder mixture in vacuum, secondary SiC is synthesized with a lattice parameter that corresponds to the standard parameter for cubic β-SiC. The interaction in an argon atmosphere is accompanied by the synthesis of secondary SiC with a decreased lattice parameter. The minimum lattice parameter (0.4336 nm) is 0.6% smaller than the standard parameter for cubic β-SiC. The morphology of the powder composite synthesized in the SiC–Fe 2 O 3 system is studied. The average particle size of the powder composite decreases with increasing weight content of secondary SiC.

中文翻译:

纳米级碳化硅与氧化铁相互作用形成的二次碳化硅

分别分析了纳米碳化硅与氧化铁在真空和氩气中在 1200 和 1400°C 下相互作用形成的超细粉末复合材料的特性。碳化硅(β-SiC)、硅化铁和碳化物、氧化硅和氮氧化硅是粉末复合材料的主要成分。确定了在 SiC-Fe 2 O 3 系统中合成的粉末复合材料中 SiC 的晶格参数。在真空中 SiC-Fe 2 O 3 粉末混合物的相互作用中,二次 SiC 被合成,其晶格参数对应于立方 β-SiC 的标准参数。氩气氛中的相互作用伴随着晶格参数降低的二次 SiC 的合成。最小晶格参数 (0.4336 nm) 比立方 β-SiC 的标准参数小 0.6%。研究了在 SiC-Fe 2 O 3 体系中合成的粉末复合材料的形貌。粉末复合材料的平均粒径随着二次 SiC 重量含量的增加而减小。
更新日期:2020-01-01
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