Abstract

The results of the development of a low-power high-voltage amplifier for creating an analyzer of the current–voltage characteristics of high-resistance semiconductor and crystal structures are presented. The output voltage ranges are 0–500 V and 0 to ± 250 V in unipolar and bipolar modes, respectively, the load current is up to 5 mA, and the pulse rise time is 10 µs. The power source (300 V) is based on a flyback boost dc–dc voltage converter.

中文翻译：

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高压放大器

摘要

提出了一种用于创建高电阻半导体和晶体结构的电流-电压特性分析器的低功率高压放大器的开发结果。在单极性和双极性模式下，输出电压范围分别为0–500 V和0至±250 V，负载电流高达5 mA，脉冲上升时间为10 µs。电源（300 V）基于反激式升压dc-dc电压转换器。