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Optical Gain in Laser Heterostructures with an Active Area Based on an InGaAs/InGaAlAs Superlattice
Optics and Spectroscopy ( IF 0.6 ) Pub Date : 2020-03-16 , DOI: 10.1134/s0030400x19120099
L. Ya. Karachinsky , I. I. Novikov , A. V. Babichev , A. G. Gladyshev , E. S. Kolodeznyi , S. S. Rochas , A. S. Kurochkin , Yu. K. Bobretsova , A. A. Klimov , D. V. Denisov , K. O. Voropaev , A. S. Ionov , V. E. Bougrov , A. Yu. Egorov

Abstract

An active area based on InGaAs/InGaAlAs superlattice for laser diodes operating in the spectral range between 1535 and 1565 nm is proposed and realized practically. It is demonstrated that using a superlattice increases the mode gain at the same values of the pump-diode current density relative to a typical active-area design based on an array of InGaAs quantum wells.


中文翻译:

基于InGaAs / InGaAlAs超晶格的具有有源区的激光异质结构中的光学增益

摘要

提出并实现了基于InGaAs / InGaAlAs超晶格的有源区域,该有源区域用于在1535至1565 nm光谱范围内工作的激光二极管。已经证明,相对于基于InGaAs量子阱阵列的典型有源区域设计,使用超晶格可以在相同的泵浦二极管电流密度值下提高模式增益。
更新日期:2020-03-16
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