Abstract Physical, electrical, and photodetection properties of stable, lead-free Cs2SnI6 (CSI) perovskite thin films prepared on thermally oxidized Si (SiO2, 100 nm) substrates via direct solution spin coating process are reported. XRD, XPS, and EDS analysis reveal that initial CsI rich-concentration, higher RH% levels (>40%) have an impact on phase formation of CSI films. The porous, sub-μm sized rods of fabricated CSI films are confirmed by FEG-SEM analysis. Contact resistance (Rc) and sheet resistance (Rsh) for CSI films, annealed at 150 °C, are decreased up to 37% and 85%, respectively, as compared with those of films processed at 75 °C. The photoresponsivity (6 mA/W) and specific detectivity (2.00 × 109 Jones) for two-terminal CSI photodetectors are achieved with annealing condition of 100℃ and at a bias voltage of 1 V as well. The preliminary photodetection properties for CSI devices processed at low temperatures indicate that they can be potentially applicable to a flexible, visible light photodetector.

中文翻译：

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CsI 浓度、相对湿度和退火温度对无铅 Cs2SnI6 钙钛矿的影响：面向可见光光电探测器的应用

摘要 报道了通过直接溶液旋涂工艺在热氧化 Si (SiO2, 100 nm) 衬底上制备的稳定无铅 Cs2SnI6 (CSI) 钙钛矿薄膜的物理、电学和光电检测特性。XRD、XPS 和 EDS 分析表明，初始富 CsI 浓度、较高的 RH% 水平 (>40%) 对 CSI 薄膜的相形成有影响。FEG-SEM 分析证实了制造的 CSI 薄膜的多孔亚微米尺寸棒。与在 75°C 下处理的薄膜相比，在 150°C 下退火的 CSI 薄膜的接触电阻 (Rc) 和薄层电阻 (Rsh) 分别降低了 37% 和 85%。两端CSI光电探测器的光响应度（6 mA/W）和比探测率（2.00 × 109 Jones）是在100℃的退火条件和1 V的偏置电压下实现的。