The thermal stability of dielectric materials with giant permittivity has always been a difficult/hot issue based on increasing demand for microelectronics and energy storage applications. In this work, we successfully synthesized Mg-doped CdCTO ceramics with a large permittivity via an ordinary mixed-oxide technique. Notably, the dielectric permittivity of the samples significantly increase at a low frequency of ~40–10⁵ Hz, and especially ε_r > 5.0 × 10⁴, tan δ ~ 0.1 when x = 0.10 at 1 kHz. Interestingly, the thermal stability of CdMg_xCu_3-xTi₄O₁₂ ceramics is closely linked with the enhanced interfacial effect. The acceptable dielectric performance was ascribed to the enhanced internal barrier layer capacitor (IBLC) effect due to the increased grain size upon Mg doping. Our findings in this work could provide useful insights as to how to simultaneously realize high thermal stability and decent dielectric performance in CdCTO and other related dielectric ceramics.

基于对微电子学和能量存储应用的需求的增长，具有高介电常数的介电材料的热稳定性一直是一个难题/热点。在这项工作中，我们通过普通的混合氧化物技术成功地合成了大介电常数的掺Mg CdCTO陶瓷。值得注意的是，样品的介电常数在约40-10的低频显著增加⁵ 赫兹，特别是ε _{- [R}  > 5.0×10 ⁴，黄褐色δ〜0.1当X 在1 kHz = 0.10。有趣的是，CdMg _x Cu _{3- x} Ti ₄ O ₁₂的热稳定性陶瓷与增强的界面效应密切相关。可接受的介电性能归因于由于添加Mg导致晶粒尺寸增加而增强的内部势垒层电容器（IBLC）效应。我们在这项工作中的发现可以为如何在CdCTO和其他相关介电陶瓷中同时实现高热稳定性和良好的介电性能提供有用的见解。