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Fighting Broken Symmetry with Doping: Toward Polar Resonant Tunneling Diodes with Symmetric Characteristics
Physical Review Applied ( IF 4.6 ) Pub Date : 2020-03-19 , DOI: 10.1103/physrevapplied.13.034048
Jimy Encomendero , Vladimir Protasenko , Farhan Rana , Debdeep Jena , Huili Grace Xing

The recent demonstration of resonant tunneling transport in nitride semiconductors has led to an invigorated effort to harness this quantum transport regime for practical applications. In polar semiconductors, however, the interplay between fixed polarization charges and mobile free carriers leads to asymmetric transport characteristics. Here, we investigate the possibility of using degenerately doped contact layers to screen the built-in polarization fields and recover symmetric resonant injection. Thanks to a high doping density, negative differential conductance is observed under both bias polarities of GaN/AlN resonant tunneling diodes (RTDs). Moreover, our analytical model reveals a lower bound for the minimum resonant-tunneling voltage achieved via uniform doping, owing to the dopant solubility limit. Charge storage dynamics is also studied by impedance measurements, showing that at close-to-equilibrium conditions, polar RTDs behave effectively as parallel-plate capacitors. These mechanisms are completely reproduced by our analytical model, providing a theoretical framework useful in the design and analysis of polar resonant-tunneling devices.

中文翻译:

通过掺杂对抗破碎的对称性:具有对称特性的极化谐振隧穿二极管

氮化物半导体中共振隧穿传输的最新证明导致人们为将这种量子传输机制用于实际应用而做出了积极的努力。然而,在极性半导体中,固定极化电荷和移动自由载流子之间的相互作用导致不对称的传输特性。在这里,我们研究了使用简并掺杂的接触层来筛选内置极化场并恢复对称谐振注入的可能性。由于高掺杂密度,在两个偏置极性下都观察到负差分电导。ñ/ñ谐振隧道二极管(RTD)。此外,由于掺杂剂溶解度的限制,我们的分析模型揭示了通过均匀掺杂获得的最小谐振隧道电压的下限。还通过阻抗测量研究了电荷存储动力学,结果表明,在接近平衡的条件下,极性RTD可以有效地用作平行板电容器。我们的分析模型完全重现了这些机理,为极性共振隧道器件的设计和分析提供了有用的理论框架。
更新日期:2020-03-20
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