Bismuth (Bi), as a topological semimetallic material, has received widespread attention on account of its fascinating properties. Here, Bi films were successfully grown through a direct and facile vapor deposition method on 300 nm SiO₂/Si (SiO₂) and polyimide (PI) substrates. The Bi films were utilized further to fabricate rigid and flexible photodetectors. The rigid photodetector based on Bi/SiO₂ shows fast, highly stable, self-powered, and ultra-broadband photoresponses. The flexible Bi/PI photodetector exhibits durability and reproducibility in photoresponse behaviors under bending with various curvature radii and after hundreds of bending cycles. Our results demonstrated that the Bi films by vapor deposition have great application potentials in the next generation of optoelectronic devices.

中文翻译：

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基于汽相沉积铋薄膜的自供电超宽带柔性光电探测器

铋（Bi）作为一种拓扑半金属材料，因其引人入胜的性能而受到广泛关注。在这里，Bi膜通过直接，简便的气相沉积方法成功地在300 nm SiO ₂ / Si（SiO ₂）和聚酰亚胺（PI）衬底上生长。Bi膜被进一步用于制造刚性和柔性光电探测器。基于Bi / SiO ₂的刚性光电探测器显示快速，高度稳定，自供电和超宽带光响应。灵活的Bi / PI光电探测器在各种曲率半径的弯曲下以及经过数百次弯曲循环后，在光响应性能方面表现出耐久性和可重复性。我们的结果表明，通过气相沉积的Bi膜在下一代光电器件中具有巨大的应用潜力。