Abstract In this paper, the Ge self-assembled islands grown at different temperatures were used as an etching mask for selective anisotropic etching of crystalline silicon (c-Si) in order to form a textured Si surface. The effects of Ge deposition temperature on the texture morphology as well as the parameters of c-Si solar cells fabricated on such structures were studied with the range of temperature from 500 °C to 800 °C. The textures on Si surface with low (

中文翻译：

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Ge沉积温度对具有表面纹理的c-Si太阳能电池参数的影响，使用SiGe岛作为掩模蚀刻Si

摘要 本文将在不同温度下生长的Ge自组装岛用作蚀刻掩模，对晶体硅（c-Si）进行选择性各向异性蚀刻，以形成纹理化的Si表面。在500°C至800°C的温度范围内研究了Ge沉积温度对在这种结构上制造的c-Si太阳能电池的织构形貌和参数的影响。Si 表面的织构具有低 (