Abstract The rough, even discontinuous morphology of vapor-deposited copper films inhibits their attractive electrical properties. In the present study, we investigate the influence of deposition time, deposition temperature, and the flow rate of the precursors on the morphology of Cu films deposited from metalorganic chemical vapor deposition. We show that it is necessary to purify the copper(I) cyclopentadienyl triethylphophine (CpCuPEt3) precursor in order to improve its stability and volatility. We also determined its saturated vapor pressure law, logPsat (Pa) = 8.614 - 2272/T (K). The Arrhenius plot of the global deposition reaction of Cu films in the presence of hydrogen between 431 and 523 K shows a low apparent activation energy of 10 kJ/mol. Electron probe microanalysis, grazing incidence X-Ray diffraction, and image analysis of the micrographs obtained by top–down surface scanning electron microscopy reveal metallic films composed of Cu islands. Their size and packed density increase and, ultimately, the islands coalesce with increasing precursor flow rate and, to a lesser extent, with increasing deposition temperature.

中文翻译：

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来自铜 (I) 环戊二烯基三乙基膦的 Cu 膜的化学气相沉积：前驱体特性以及生长参数与膜形态之间的相互作用

摘要 气相沉积铜膜粗糙、甚至不连续的形态抑制了它们有吸引力的电学性能。在本研究中，我们研究了沉积时间、沉积温度和前驱体流速对金属有机化学气相沉积铜膜形态的影响。我们表明有必要纯化铜（I）环戊二烯基三乙基膦（CpCuPEt3）前体以提高其稳定性和挥发性。我们还确定了它的饱和蒸气压定律，logPsat (Pa) = 8.614 - 2272/T (K)。在 431 和 523 K 之间存在氢的情况下，Cu 膜的全局沉积反应的 Arrhenius 图显示了 10 kJ/mol 的低表观活化能。电子探针微量分析，掠入射X射线衍射，通过自上而下的表面扫描电子显微镜获得的显微照片和图像分析揭示了由 Cu 岛组成的金属膜。它们的尺寸和填充密度增加，最终，这些岛会随着前体流速的增加而聚结，并且在较小程度上随着沉积温度的升高而聚结。