Chiral surfaces are of growing interest for enantioselective adsorption and reactions. While metal surfaces can be prepared with a wide range of chiral surface orientations, chiral oxide surface preparation is more challenging. We demonstrate the chirality of a metal surface can be used to direct the homochiral growth of a thin film chiral oxide. Specifically, we study the chiral "29" copper oxide, formed by oxidizing a Cu(111) single crystal at 650 K. Surface structure spread single crystals, which expose a continuous distribution of surface orientations as a function of position on the crystal, enable us to systematically investigate the mechanism of chirality transfer between the metal and the surface oxide with high-resolution scanning tunneling microscopy. We discover that the local underlying metal facet directs the orientation and chirality of the oxide overlayer. Importantly, single homochiral domains of the "29" oxide were found in areas where the Cu step edges that templated growth were ≤20 nm apart. We use this information to select a Cu(239 241 246) oriented single crystal and demonstrate that a "29" oxide surface can be grown in homochiral domains by templating from the subtle chirality of the underlying metal crystal. This work demonstrates how a small degree of chirality induced by slight misorientation of a metal surface (∼1 sites/20 nm2) can be amplified by oxidation to yield a homochiral oxide with a regular array of chiral oxide pores (∼75 sites/20 nm2). This offers a general approach for making chiral oxide surfaces via oxidation of an appropriately "miscut" metal surface.

中文翻译：

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模板化的手性薄膜氧化物的生长。

手性表面对于对映选择性吸附和反应的兴趣日益增长。尽管可以以多种手性表面取向制备金属表面，但是手性氧化物表面制备更具挑战性。我们证明金属表面的手性可用于指导薄膜手性氧化物的同手性生长。具体来说，我们研究了手性“ 29”氧化铜，该氧化铜是通过在650 K下氧化Cu（111）单晶而形成的。表面结构扩散了单晶，从而暴露出表面取向随晶体位置的变化连续分布。我们通过高分辨率扫描隧道显微镜系统地研究金属与表面氧化物之间的手性转移机理。我们发现，本地底层金属刻面指导了氧化物覆盖层的取向和手性。重要的是，在模板生长的铜台阶边缘相距≤20nm的区域中发现了“ 29”氧化物的单一同手性域。我们使用此信息来选择Cu（239 241 246）取向的单晶，并证明通过从下面的金属晶体的微弱手性中进行模板化，可以在同手性域中生长“ 29”氧化物表面。这项工作证明了如何通过氧化作用放大由金属表面的轻微取向错误（〜1个位点/ 20 nm2）引起的少量手性，从而产生具有规则手性氧化物孔阵列（〜75个位点/ 20 nm2）的均手性氧化物）。这提供了通过适当的“氧化”来制备手性氧化物表面的一般方法。