Boron-doped ZnO:B (BZO) films with various doping levels have been prepared on large-area substrates by low pressured chemical vapor deposition technique. The influence of doping amount on electrical and optical properties of BZO films has been investigated. It is found that ZnO phase synthesis is hardly affected when the doping gas flow varies from 25 to 100 sccm, but the preferential orientation of grain growth is influenced progressively. It is interesting that there should be a threshold value of doping gas flow of 75 sccm that will cause an abrupt reduction in grain size of BZO and therefore dramatically weakens the light-scattering capacity of the film. It is also noted that the boron atoms doped in BZO films are partly electrically active, and moreover, the heavier doping level, the more inactive B atoms, which not only reduces carrier mobility, but also boosts a stronger light absorption due to enhanced impurity scattering. When the doping gas flow is 75 sccm, the BZO film can achieve a proper comprehensive property with a R_sq of 15.2 Ω/□, an average haze of 21.3% and an average TT of 80.2%. Using this film as the front electrode of a-Si:H/μc-Si:H solar cell, the optimum performance of the solar cell with a J_sc of 12.68 mA/cm², a V_oc of 1.385 mV, and an initial efficiency (η) of 11.83% was obtained.

通过低压化学气相沉积技术在大面积衬底上制备了具有不同掺杂水平的掺硼ZnO：B（BZO）薄膜。研究了掺杂量对BZO薄膜电学和光学性能的影响。发现当掺杂气体流量在25至100 sccm之间变化时，几乎不会影响ZnO相的合成，但是晶粒生长的优先取向会逐渐受到影响。有趣的是，应该有75 sccm的掺杂气体流量阈值，这将导致BZO的晶粒尺寸突然减小，从而大大削弱薄膜的光散射能力。还应注意，BZO膜中掺杂的硼原子具有部分电活性，此外，掺杂水平越重，B原子越无活性，这不仅降低了载流子迁移率，而且由于杂质散射的增强，还增强了光吸收能力。当掺杂气体流量为75 sccm时，BZO膜可以获得适当的综合性能，并且R _sq为15.2Ω/□，平均雾度为21.3％，平均TT为80.2％。使用该膜作为-Si：H / μc- Si：H太阳能电池的前电极，可实现J _sc为12.68 mA / cm ²，V _oc为1.385 mV且初始电压为5％的太阳能电池的最佳性能。获得11.83％的效率（η）。