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Metal-Organic Vapor Phase Epitaxy of the Quaternary Metastable Alloy In1–xGaxAs1-yBiy and its Kinetics of Growth
Journal of Crystal Growth ( IF 1.8 ) Pub Date : 2020-05-01 , DOI: 10.1016/j.jcrysgro.2020.125611
Yingxin Guan , Ayushi Rajeev , Susan E. Babcock , Luke J. Mawst , Thomas F. Kuech

Abstract The metal–organic vapor phase epitaxy (MOVPE) of the quaternary alloy In1-xGaxAs1-yBiy has been explored on InAs and InP substrates to determine the group III and group V incorporation kinetics and their interdependences during low temperature growth. Under the growth conditions investigated, Ga did not incorporate into the epitaxial InAs1-yBiy on the InAs substrate. In1-xGaxAs1-yBiy epilayers could be grown pseudomorphically on the InP substrate with 0.37 ≤ x ≤ 0.59 and y ≤ 0.022. Strong interactions between the Ga and In incorporation processes were observed in the In1-xGaxAs1-yBiy growth, which were attributed to the precursor gas-phase alkyl-exchange reactions and the formation of Ga-CH3 on the growth front. Bi incorporation is independent of the group III composition and the strain state of the In1-xGaxAs1-yBiy epilayers on the InP substrate. Comparisons between the In1-xGaxAs1-yBiy and the GaAs1-yBiy growth also suggest an absence of Bi surface site-blocking on the In-terminated surface. This study demonstrates the successful MOVPE growth of In1-xGaxAs1-yBiy on the InP substrate and reveals the influences of the gas-phase and surface species interactions on the quaternary alloy compositional control during the low temperature MOVPE growth.

中文翻译:

四元亚稳态合金 In1-xGaxAs1-yBiy 的金属有机气相外延及其生长动力学

摘要 已经在 InAs 和 InP 衬底上探索了四元合金 In1-xGaxAs1-yBiy 的金属有机气相外延 (MOVPE),以确定低温生长过程中 III 族和 V 族掺入动力学及其相互依赖性。在研究的生长条件下,Ga 没有并入 InAs 衬底上的外延 InAs1-yBiy。In1-xGaxAs1-yBiy 外延层可以在 InP 衬底上假晶生长,0.37 ≤ x ≤ 0.59 和 y ≤ 0.022。在 In1-xGaxAs1-yBiy 生长中观察到 Ga 和 In 掺入过程之间的强相互作用,这归因于前体气相烷基交换反应和 Ga-CH3 在生长前沿的形成。Bi 掺入与 InP 衬底上的 In1-xGaxAs1-yBiy 外延层的 III 族组成和应变状态无关。In1-xGaxAs1-yBiy 和 GaAs1-yBiy 生长之间的比较也表明在终止表面上不存在 Bi 表面位点阻塞。该研究证明了 In1-xGaxAs1-yBiy 在 InP 衬底上的成功 MOVPE 生长,并揭示了低温 MOVPE 生长过程中气相和表面物质相互作用对四元合金成分控制的影响。
更新日期:2020-05-01
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