In this research, various amounts of nano-sized tungsten carbide (WC_n: 0, 1.5, and 3 wt%) were added to TiC-10 vol% SiC_w system. All samples were sintered at 1900 °C under an external pressure of 40 MPa for 7 min by spark plasma sintering (SPS) procedure. Microstructural, thermodynamical, and XRD evaluations revealed the formation of non-stoichiometric TiC_x, in-situ TiC, SiC, and WSi₂. The carbon exited the TiC lattice owing to the formation of non-stoichiometric TiC_x precipitated at the grain boundaries. Although introducing 1.5 wt% WC_n enhanced the relative density of TiC-SiC_w (98.7%) by around 0.7%, further addition of this sintering aid had a destructive impact. The addition of WC_n decreased both hardness and flexural strength of the specimens, and the poorest values (11.6 GPa and 368 MPa, respectively) were recorded for TiC-10 vol% SiC_w-3 wt% WC_n. The highest thermal conductivity (24.3 W/m.K) was obtained by the addition of 1.5 wt% WC_n.

在这项研究中，将各种数量的纳米级碳化钨（WC _n：0、1.5和3 wt％）添加到TiC-10体积％SiC _w体系中。通过火花等离子体烧结（SPS）程序将所有样品在40℃的外部压力下于1900℃烧结7分钟。微观结构，热力学和XRD评估表明，形成了非化学计量的TiC _x，原位TiC，SiC和WSi ₂。由于形成在晶界处沉淀的非化学计量的TiC _x，碳离开了TiC晶格。尽管引入1.5 wt％的WC _n可以提高TiC-SiC _w的相对密度（98.7％）约0.7％，进一步添加这种烧结助剂具有破坏性影响。WC _n的添加降低了样品的硬度和抗弯强度，并且TiC-10体积％SiC _w -3 wt％WC _n的最差值（分别为11.6 GPa和368 MPa）被记录。通过添加1.5 wt％的WC _n可获得最高的导热系数（24.3 W / mK）。