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Reversible transition of filamentary and ferroelectric resistive switching in BaTiO3/SmNiO3 heterostructures
Journal of Materials Chemistry C ( IF 6.4 ) Pub Date : 2020-03-16 , DOI: 10.1039/d0tc00676a Yan-Dong Liu 1, 2, 3, 4, 5 , Chuan-Zhu Hu 1, 2, 3, 4, 5 , Jin-Jin Wang 1, 2, 3, 4, 5 , Ni Zhong 1, 2, 3, 4, 5 , Ping-Hua Xiang 1, 2, 3, 4, 5 , Chun-Gang Duan 1, 2, 3, 4, 5
Journal of Materials Chemistry C ( IF 6.4 ) Pub Date : 2020-03-16 , DOI: 10.1039/d0tc00676a Yan-Dong Liu 1, 2, 3, 4, 5 , Chuan-Zhu Hu 1, 2, 3, 4, 5 , Jin-Jin Wang 1, 2, 3, 4, 5 , Ni Zhong 1, 2, 3, 4, 5 , Ping-Hua Xiang 1, 2, 3, 4, 5 , Chun-Gang Duan 1, 2, 3, 4, 5
Affiliation
Recently, resistive switching (RS) phenomena have been widely studied for their promising properties, which are favorable to be implemented in the next-generation information technology. However, devices with multiple resistance states originating from different mechanisms, which are desirable for applications, have seldom been reported. In the current work, a coexistence of clockwise and counterclockwise RS behaviors has been found in BaTiO3/SmNiO3 (BTO/SNO) heterostructures, which have been fabricated by pulsed laser deposition. The mechanisms for the two RS behaviors were demonstrated as barrier profile modulations due to ferroelectric polarization reversal and formation/rupture of the conductive filament due to the migration of VO, respectively. Tri-nonvolatile resistance states have been clearly observed, and a reversible transition between them has been confirmed. Furthermore, preliminary simulations of synapse characteristics, paired-pulse facilitation and paired-pulse depression were realized by only varying the electric stimulation voltage amplitude and not the polarity. Our findings reported here shed new light on designing next-generation novel devices.
中文翻译:
BaTiO3 / SmNiO3异质结构中丝状和铁电电阻转换的可逆转变
近年来,电阻开关(RS)现象因其有前途的特性而得到了广泛的研究,这有利于在下一代信息技术中实现。然而,很少有应用报道了具有源自不同机理的具有多个电阻状态的器件,这对于应用是合乎需要的。在当前的工作中,在通过脉冲激光沉积制造的BaTiO 3 / SmNiO 3(BTO / SNO)异质结构中发现了顺时针和逆时针RS行为的共存。这两种RS行为的机制被证明是由于铁电极化反转以及由于V O迁移而导致的导电丝的形成/破裂而引起的势垒轮廓调制, 分别。已经清楚地观察到三非易失性电阻状态,并且已经确认了它们之间的可逆转变。此外,仅改变电刺激电压的幅度而不改变极性,就可以实现对突触特性,成对脉冲促进和成对脉冲抑制的初步模拟。我们在这里报告的发现为设计下一代新型设备提供了新的思路。
更新日期:2020-03-16
中文翻译:
BaTiO3 / SmNiO3异质结构中丝状和铁电电阻转换的可逆转变
近年来,电阻开关(RS)现象因其有前途的特性而得到了广泛的研究,这有利于在下一代信息技术中实现。然而,很少有应用报道了具有源自不同机理的具有多个电阻状态的器件,这对于应用是合乎需要的。在当前的工作中,在通过脉冲激光沉积制造的BaTiO 3 / SmNiO 3(BTO / SNO)异质结构中发现了顺时针和逆时针RS行为的共存。这两种RS行为的机制被证明是由于铁电极化反转以及由于V O迁移而导致的导电丝的形成/破裂而引起的势垒轮廓调制, 分别。已经清楚地观察到三非易失性电阻状态,并且已经确认了它们之间的可逆转变。此外,仅改变电刺激电压的幅度而不改变极性,就可以实现对突触特性,成对脉冲促进和成对脉冲抑制的初步模拟。我们在这里报告的发现为设计下一代新型设备提供了新的思路。