Continuous room temperature nanowire lasing from silicon-integrated optoelectronic elements requires careful optimisation of both the lasing cavity Q-factor and population inversion conditions. We apply time-gated optical interferometry to the lasing emission from high-quality GaAsP/GaAs quantum well nanowire laser structures, revealing high Q-factors of 1250 ± 90 corresponding to end-facet reflectivities of R = 0.73 ± 0.02. By using optimised direct–indirect band alignment in the active region, we demonstrate a well-refilling mechanism providing a quasi-four-level system leading to multi-nanosecond lasing and record low room temperature lasing thresholds (~6 μJ cm⁻² pulse⁻¹) for III–V nanowire lasers. Our findings demonstrate a highly promising new route towards continuously operating silicon-integrated nanolaser elements.

由硅集成光电元件连续进行室温纳米线激光发射，需要仔细优化激光腔Q因子和粒子数反转条件。我们将时控光学干涉技术应用于高质量GaAsP / GaAs量子阱纳米线激光器结构的激光发射，揭示了1250±90的高Q因子，对应于端面反射率R  = 0.73±0.02。通过在有源区域中使用优化的直接-间接能带对准，我们演示了一种阱填充机制，该机制提供了准四能级系统，导致了多纳秒激光 发射并记录了较低的室温激光发射阈值（〜6μJcm ^-2脉冲^{- 1个}）用于III–V纳米线激光器。我们的发现证明了一种极有希望的新方法，可以持续操作集成硅的纳米激光元件。