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New Insights on Output Capacitance Losses in Wide-Band-Gap Transistors
IEEE Transactions on Power Electronics ( IF 6.7 ) Pub Date : 2020-07-01 , DOI: 10.1109/tpel.2019.2958000 Mohammad Samizadeh Nikoo , Armin Jafari , Nirmana Perera , Elison Matioli
IEEE Transactions on Power Electronics ( IF 6.7 ) Pub Date : 2020-07-01 , DOI: 10.1109/tpel.2019.2958000 Mohammad Samizadeh Nikoo , Armin Jafari , Nirmana Perera , Elison Matioli
The low on -resistance of wide-band-gap (WBG) transistors is a key feature for efficient power converters; however, the anomalous loss in their output capacitance (C OSS) severely limits their performance at high switching frequencies. Characterizing C OSS losses based on the large-signal measurement methods requires an extensive effort, as separate measurements are needed at different operation points, including voltage swing, frequency, and dv /dt . Furthermore, there is a practical tradeoff in the maximum voltage and frequency applied to the device. Here, we introduce a new circuit model, including an effective C OSS and a frequency-dependent series resistance, along with a simple small-signal method to fully characterize C OSS losses in WBG transistors. The method accurately predicts C OSS losses at any voltage swing or frequency. Contrary to other methods, this technique directly leads to a general identification of C OSS losses at different operation points, revealing new insights on C OSS losses in WBG transistors, especially the dependence of E DISS on voltage and frequency. Based on the proposed approach, the issue of C OSS losses in enhancement-mode GaN and SiC transistors was assigned to the limited quality factor of C OSS. The precise characterization of C OSS losses proposed in this letter is essential for designing efficient high-frequency power converters.
中文翻译:
关于宽带隙晶体管输出电容损耗的新见解
低上 - 宽带隙 (WBG) 晶体管的电阻是高效电源转换器的关键特性;然而,其输出电容的异常损耗(C OSS ) 严重限制了它们在高开关频率下的性能。表征C 基于大信号测量方法的OSS损耗需要大量的工作,因为需要在不同的工作点进行单独的测量,包括电压摆幅、频率和影音 /dt . 此外,在应用于设备的最大电压和频率方面存在实际权衡。在这里,我们介绍了一个新的电路模型,包括一个有效的C OSS和一个频率相关的串联电阻,以及一个简单的小信号方法来充分表征C WBG 晶体管中的OSS损耗。该方法准确预测C 任何电压摆幅或频率下的OSS损耗。与其他方法相反,这种技术直接导致对C OSS在不同操作点的损失,揭示了新的见解C WBG 晶体管中的OSS损耗,尤其是对乙 电压和频率上的DISS。基于所提出的方法,问题C 增强型 GaN 和 SiC 晶体管中的OSS损耗归因于有限的品质因数C 开源软件。的精确表征C 这封信中提出的OSS损耗对于设计高效的高频电源转换器至关重要。
更新日期:2020-07-01
中文翻译:
关于宽带隙晶体管输出电容损耗的新见解
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