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Mach-Zehnder Silicon Photonic Modulator Assisted by Phase-Shifted Bragg Gratings
IEEE Photonics Technology Letters ( IF 2.6 ) Pub Date : 2020-04-15 , DOI: 10.1109/lpt.2020.2978793
O. Jafari , W. Shi , S. Larochelle

We experimentally demonstrate a silicon photonic Mach-Zehnder modulator (MZM) assisted by phase-shifted Bragg gratings. Coupled resonators are inserted in the Bragg grating structure to significantly enhance the phase modulation efficiency, while maintaining a wide optical bandwidth compared to other resonator-based modulators. Fabricated using a CMOS-compatible foundry process, the device achieved a small-signal $V_{\pi }\,\,\times $ L of 0.18 V.cm, which is seven times lower than a conventional silicon MZM fabricated with the same process. The device has a compact footprint, with a length of only $162~\mu \text{m}$ , and shows a modulation bandwidth of 28 GHz at a reverse bias of 1 V. Non-return-to-zero modulation is demonstrated at 30 Gb/s with a bit-error-rate (BER) below the 7%-overhead forward error correction (FEC) threshold over a bandwidth of 3.5 nm. This bandwidth should translate into an operating temperature range greater than 40 0C.

中文翻译:

相移布拉格光栅辅助的 Mach-Zehnder 硅光子调制器

我们通过实验证明了由相移布拉格光栅辅助的硅光子马赫-曾德调制器 (MZM)。耦合谐振器插入布拉格光栅结构中以显着提高相位调制效率,同时与其他基于谐振器的调制器相比保持较宽的光学带宽。该器件采用兼容 CMOS 的代工工艺制造,实现了小信号 $V_{\pi }\,\,\times $ 0.18 V.cm,比采用相同工艺制造的传统硅 MZM 低七倍。该设备占地面积小,长度仅为 $162~\mu \text{m}$ ,并显示了在 1 V 反向偏置下的 28 GHz 调制带宽。 不归零调制在 30 Gb/s 下演示,误码率 (BER) 低于 7% 开销前向误差3.5 nm 带宽上的校正 (FEC) 阈值。该带宽应转化为大于 40 0 C的工作温度范围。
更新日期:2020-04-15
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