InAs/GaAsSb type-II superlattice (T2SL) materials grown at a higher temperature and lattice-matched to InAs substrates are considered to have significant advantages in long wavelength infrared (LWIR) detection. In this work, an InAs/GaAsSb T2SL LWIR focal plane array (FPA) was fabricated and evaluated. The FPA has a format of $320\times256$ with a pixel pitch of 30 $\mu \text{m}$ and exhibits a 100% cutoff wavelength of 9.5 $\mu \text{m}$ at 80 K. Under a bias of -0.02V, the detectors show a dark current of $1.7\times 10^{-5}$ A/cm² and a differential resistance-area of $1.5\times 10^{3} \Omega \cdot \text {cm}^{2}$ . The noise equivalent temperature difference and operability of the FPA are 20.7 mK and 99.2% respectively under an integration time of $400~\mu \text{s}$ , a 300 K background and F/2.0 optics. This high-performance FPA further verifies the feasibility of InAs/GaAsSb T2SL in LWIR detection.

中文翻译：

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InAs/GaAsSb II 型超晶格 LWIR 焦平面阵列探测器在 InAs 衬底上生长

在较高温度下生长并与 InAs 衬底晶格匹配的 InAs/GaAsSb II 型超晶格 (T2SL) 材料被认为在长波长红外 (LWIR) 检测中具有显着优势。在这项工作中，制造并评估了 InAs/GaAsSb T2SL LWIR 焦平面阵列 (FPA)。FPA 的格式为 $320\times256$ 像素间距为 30 $\mu \text{m}$ 100% 截止波长为 9.5 $\mu \text{m}$ 在 80 K。在 -0.02V 的偏压下，探测器显示暗电流为 $1.7\乘以 10^{-5}$ A/cm ²和微分电阻面积 $1.5\times 10^{3} \Omega \cdot \text {cm}^{2}$ . FPA 的噪声等效温差和可操作性分别为 20.7 mK 和 99.2%，积分时间为 $400~\mu \text{s}$ ，300 K 背景和 F/2.0 光学元件。这种高性能 FPA 进一步验证了 InAs/GaAsSb T2SL 在 LWIR 检测中的可行性。