In the current study, we numerically investigate the optical properties of interdiffused GaAs/AlwGa1−wAs multiple quantum well systems under the influence of an external electric field. We solve the resulting Schrodinger equation by using a finite element method and present the algorithm. Here, our motivation was that the interdiffusion effect leads to a non-square more realistic confining potential profile. By using few animations, we show that the effect of the interdiffusion on the optical properties of the mentioned system is not so simple and trivial as has so far been described. These videos can also help experimentalists to select easier their physical parameters. The peak position and amplitude of optical rectification coefficient and probability density can be tuned using parameters such as interdiffusion length Ld, composition amplitude w0, electric field, system length and number of wells.

中文翻译：

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相互扩散和电场对 GaAs/AlwGa1−wAs 系统光学整流系数的影响：从单量子阱到多量子阱的交叉

在当前的研究中，我们数值研究了在外部电场影响下互扩散的 GaAs/AlwGa1-wAs 多量子阱系统的光学特性。我们通过使用有限元方法求解得到的薛定谔方程并提出算法。在这里，我们的动机是相互扩散效应导致非方形更现实的限制电位剖面。通过使用很少的动画，我们表明相互扩散对上述系统的光学特性的影响并不像迄今为止描述的那样简单和微不足道。这些视频还可以帮助实验人员更轻松地选择他们的物理参数。光学整流系数和概率密度的峰值位置和幅度可以使用互扩散长度 Ld、