Abstract Various structures were fabricated through a copper-assisted chemical etching method for texturization of monocrystalline silicon solar cells, including nanopore, inverted pyramid, V-groove, upright pyramid and hybrid structures. Structural characteristics, etching processes and anti-reflection abilities of the textured structures were systematically analyzed. Brand new texturization results were observed in this research. A possibility that the copper-catalyzed textured structures can be terminated with silicon {1 1 0} crystalline planes is proposed, and the evidence is provided. Furthermore, the transformation of the textured structures was studied, and the agglomerated behavior of the copper nanoparticles deposited on the silicon surface during etching was demonstrated to be a prominent source for the formation of various textured structures. The influences of etchant components and initial silicon surface states on the agglomeration were also studied. Consequently, the surface morphology and anti-reflection property of the textured silicon wafers can be well regulated by controlling the agglomeration of deposited copper nanoparticles in the etching process. A minimum average reflectance of 6.19% in the wavelength range of 300–1000 nm was obtained, which indicates great potentials of this copper-assisted texturization process for the photovoltaic application. In addition, according to the experimental results and analyses, a practical guidance for texturization of silicon solar cells is provided.

中文翻译：

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通过铜辅助化学蚀刻调节硅太阳能电池的表面纹理化

摘要 通过铜辅助化学蚀刻方法制备了用于单晶硅太阳能电池织构化的各种结构，包括纳米孔、倒金字塔、V型槽、直立金字塔和混合结构。系统地分析了纹理结构的结构特征、蚀刻工艺和抗反射能力。在这项研究中观察到了全新的组织化结果。提出了铜催化纹理结构可以用硅 {1 1 0} 晶面终止的可能性，并提供了证据。此外，研究了纹理结构的转换，并且在蚀刻过程中沉积在硅表面上的铜纳米颗粒的聚集行为被证明是形成各种纹理结构的主要来源。还研究了蚀刻剂成分和初始硅表面状态对团聚的影响。因此，通过控制蚀刻过程中沉积的铜纳米颗粒的团聚，可以很好地调节纹理化硅晶片的表面形貌和抗反射性能。在 300-1000 nm 的波长范围内获得了 6.19% 的最小平均反射率，这表明这种铜辅助纹理化工艺在光伏应用中具有巨大潜力。此外，根据实验结果和分析，