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Temperature dependence of Raman scattering in the Cu2ZnSnSe4 thin films on a Ta foil substrate
Solar Energy ( IF 6.7 ) Pub Date : 2020-05-01 , DOI: 10.1016/j.solener.2020.03.043
A.V. Stanchik , M.S. Tivanov , I.I. Tyukhov , R. Juskenas , O.V. Korolik , V.F. Gremenok , A.M. Saad , A. Naujokaitis

Abstract The temperature dependence (in range from 24 to 290 K) of Raman spectroscopy of the Cu2ZnSnSe4 (CZTSe) films with Zn-rich (series A) and Zn-poor (series B) composition obtained on a Ta foil is investigated. Analisys and approximation by the Lorentz function of the CZTSe Raman spectra suggests that the CZTSe most intense Raman peak consists of two modes (at 192/189 and 194/195 cm−1), which are slightly shifted from each other. In addition, the Raman peaks around 192 and 189 cm−1 lead to asymmetric broadening of dominant peaks at 194 and 195 cm−1 in Raman spectra of the CZTSe films series A and B, respectively. In the case of the Sn-rich CZTSe films, we attribute of Raman peak around 189 cm−1 to SnSe2 compound. However in the case of the Sn-poor CZTSe films, the observable shift is too high to assign confidently the 192 cm−1 band to a SnSe2 compound, which was not detected by XRD analysis. We suppose that this mode is attributed to disordered kesterite structure. The temperature dependence Raman spectra for both series of the CZTSe films shows that a change temperature from 290 to 24 K leads to position shift and narrowing of the CZTSe Raman A-modes. The calculated temperature coefficients and anharmonic constants in Klemens model approximations for temperature dependence of shift position and FWHM of the CZTSe A-modes shown that four-phonon process has dominant contribution in damping process and as a consequence in Raman spectrum changes for two series of the CZTSe films.

中文翻译:

Ta箔衬底上Cu2ZnSnSe4薄膜中拉曼散射的温度依赖性

摘要 研究了在 Ta 箔上获得的具有富锌(系列 A)和贫锌(系列 B)成分的 Cu2ZnSnSe4 (CZTSe) 薄膜的拉曼光谱的温度依赖性(在 24 到 290 K 的范围内)。通过 CZTSe 拉曼光谱的洛伦兹函数的分析和近似表明,CZTSe 最强烈的拉曼峰由两种模式(在 192/189 和 194/195 cm-1)组成,它们彼此略微偏移。此外,在 CZTSe 薄膜系列 A 和 B 的拉曼光谱中,192 和 189 cm-1 附近的拉曼峰导致主峰在 194 和 195 cm-1 处的不对称展宽。对于富含 Sn 的 CZTSe 薄膜,我们将 189 cm-1 附近的拉曼峰归因于 SnSe2 化合物。然而,在缺乏 Sn 的 CZTSe 薄膜的情况下,可观察到的位移太高,无法将 192 cm-1 谱带确定为 SnSe2 化合物,XRD 分析未检测到该谱带。我们假设这种模式归因于无序的锌黄锡矿结构。两个系列 CZTSe 薄膜的温度依赖性拉曼光谱表明,从 290 到 24 K 的温度变化导致 CZTSe 拉曼 A 模式的位置偏移和变窄。在 CZTSe A 模式的位移位置和 FWHM 的温度相关性的 Klemens 模型近似值中计算的温度系数和非谐常数表明,四声子过程在阻尼过程中起主导作用,并因此导致两个系列的拉曼光谱变化CZTSe 薄膜。两个系列 CZTSe 薄膜的温度依赖性拉曼光谱表明,从 290 到 24 K 的温度变化导致 CZTSe 拉曼 A 模式的位置偏移和变窄。在 CZTSe A 模式的位移位置和 FWHM 的温度相关性的 Klemens 模型近似值中计算的温度系数和非谐常数表明,四声子过程在阻尼过程中起主导作用,并因此导致两个系列的拉曼光谱变化CZTSe 薄膜。两个系列 CZTSe 薄膜的温度依赖性拉曼光谱表明,从 290 到 24 K 的温度变化导致 CZTSe 拉曼 A 模式的位置偏移和变窄。在 CZTSe A 模式的位移位置和 FWHM 的温度相关性的 Klemens 模型近似值中计算的温度系数和非谐常数表明,四声子过程在阻尼过程中起主导作用,并因此导致两个系列的拉曼光谱变化CZTSe 薄膜。
更新日期:2020-05-01
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