Abstract Temperature dependences of photoluminescence (PL) spectra of two different InGaN/GaN multiple quantum wells (MQWs) were studied at different excitation powers. The results show that, compared with MQWs with a gradually increased In content, the MQWs with a gradually decreased In content showed a lower peak energy, stronger phase separation, more robust carrier localization effect, and a stronger quantum-confined Stark effect (QCSE). These characteristics are attributed to a fact that, compared with the former, the latter has a higher average In content in the layer of each InGaN well, due to the less significant volatilization of In incorporated therein.

中文翻译：

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InGaN/GaN多量子阱的光致发光特性，每个InGaN阱层中的铟含量沿生长方向逐渐变化

摘要 研究了两种不同 InGaN/GaN 多量子阱 (MQW) 在不同激发功率下的光致发光 (PL) 光谱的温度依赖性。结果表明，与In含量逐渐增加的MQWs相比，In含量逐渐减少的MQWs表现出更低的峰值能量、更强的相分离、更强的载流子定域效应和更强的量子限制斯塔克效应（QCSE） . 这些特性归因于这样一个事实，即与前者相比，后者在每个 InGaN 阱的层中具有更高的平均 In 含量，这是由于其中掺入的 In 挥发不显着。