Low-bandgap Sn/Pb ABX₃ perovskites have reached photovoltaic power conversion efficiencies >20%, but they usually have poor stability due to the common use of acidic poly(3,4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS) hole transport layers and A-site cation compositions containing methylammonium (MA). Here, we develop a process to enable high-quality MA-free Sn/Pb perovskite films grown using a gas quenching process instead of the conventional antisolvents, which provides improved control of the film growth and eliminates wrinkling. Using this method in a device structure with poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA) instead of PEDOT:PSS as the hole transport layer, devices can reach efficiencies up to 20%_mppt at 0.06 cm² and up to 17.5%_mppt at 1 cm² active area. With these improvements, the devices are characterized for thermal stability and show 80% of the initial power output remaining after 4000 h at 85 °C.

中文翻译：

---

通过接触工程和气体淬火工艺改进低带隙的锡铅钙钛矿太阳能电池

低带隙Sn / Pb ABX ₃钙钛矿的光电转换效率达到> 20％，但是由于通常使用酸性聚（3,4-乙撑二氧噻吩）：聚苯乙烯磺酸盐（PEDOT：PSS）空穴传输层，因此它们的稳定性通常较差以及含有甲基铵（MA）的A-位阳离子组合物。在这里，我们开发了一种方法，该方法可实现使用气体淬火工艺代替传统的抗溶剂生长的高质量无MA锡/铅钙钛矿膜，从而改善了对膜生长的控制并消除了皱纹。在以聚[双（4-苯基）（2,4,6-三甲基苯基）胺]（PTAA）代替PEDOT：PSS作为空穴传输层的器件结构中使用此方法，器件可以达到高达20％_mppt的效率在0.06厘米²在1 cm ^2的有效面积上最高可达_mppt的17.5％。通过这些改进，这些器件具有热稳定性，并且在85°C下经过4000小时后仍显示80％的初始功率输出。