By integrating a free-standing cadmium sulfide (CdS) nanowire onto a silicon nitride (SiN) photonic chip, we demonstrate a highly compact on-chip single-mode CdS nanowire laser. The mode selection is realized using a Mach-Zehnder interferometer (MZI) structure. When the pumping intensity exceeds the lasing threshold of 4.9 kW/cm², on-chip single-mode lasing at ~518.9 nm is achieved with a linewidth of 0.1 nm and a side-mode suppression ratio of up to a factor of 20 (13 dB). The output of the nanowire laser is channelled into an on-chip SiN waveguide with high efficiency (up to 58%) by evanescent coupling, and the directional coupling ratio between the two output ports can be varied from 90 to 10% by predesigning the coupling length of the SiN waveguide. Our results open new opportunities for both nanowire photonic devices and on-chip light sources and may pave the way towards a new category of hybrid nanolasers for chip-integrated applications.

通过将独立的硫化镉（CdS）纳米线集成到氮化硅（SiN）光子芯片上，我们展示了高度紧凑的芯片上单模CdS纳米线激光器。模式选择是使用Mach-Zehnder干涉仪（MZI）结构实现的。当抽气强度超过4.9 kW / cm ²的激射阈值时，在〜518.9 nm处的片上单模激光可通过0.1 nm的线宽和高达20的因子（13 dB）的侧模抑制比实现。纳米线激光器的输出通过e逝耦合被高效地传输到片上SiN波导中（高达58％），并且通过预先设计耦合，两个输出端口之间的定向耦合比可以在90％到10％之间变化SiN波导的长度。我们的研究结果为纳米线光子器件和片上光源打开了新的机遇，并可能为芯片集成应用的新型混合纳米激光器铺平道路。