Abstract In this study, we investigated the effects generated by ion bombardment on the charge transport properties of organic semiconductor devices. Focused ion beam (FIB) technology was used to induce the bombardment at different ion doses on poly(3-hexylthiophene) (rrP3HT) and poly(9,9-dioctylfluorene-alt-bithiophene) (F8T2) organic semiconductors. The characterization techniques demonstrated the presence of two regimes: at 2E13 and 2E14 doses. UV–Vis absorption, Raman spectroscopy and advanced electron microscopy analysis reveal the presence of a chemically and structurally modified layer approximately 40 nm thick. The results were confirmed by theoretical ion tracking simulation nearly 40–50 nm thick from the organic surface. The dependence of charge transport and ion bombardment was clearly evidenced by modifications in the charge carrier mobility that formed defects induced by the ion beams, such as degassing, cross-linking polymer chains, and the transformation of functional groups in the ion tracking region.

中文翻译：

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通过聚焦离子束对有机器件进行化学和结构改性

摘要 在这项研究中，我们研究了离子轰击对有机半导体器件电荷传输特性的影响。聚焦离子束 (FIB) 技术用于以不同的离子剂量诱导聚（3-己基噻吩）（rrP3HT）和聚（9,9-二辛基芴-alt-联噻吩）（F8T2）有机半导体的轰击。表征技术证明存在两种方案：2E13 和 2E14 剂量。UV-Vis 吸收、拉曼光谱和先进的电子显微镜分析揭示了大约 40 nm 厚的化学和结构改性层的存在。结果通过距离有机表面近 40-50 nm 厚的理论离子跟踪模拟得到证实。