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Coupled-Line-Based Ka-Band CMOS Power Dividers
IEEE Microwave and Wireless Components Letters ( IF 2.374 ) Pub Date : 2020-02-17 , DOI: 10.1109/lmwc.2020.2968803
Yo-Sheng Lin; Kai-Siang Lan

We present the design and analysis of coupled-line-based Ka -band CMOS power dividers. A single spiral structure with a symmetrical layout is adopted to achieve a miniature area and small amplitude imbalance (AI) and phase difference (PD) performance. The first divider (divider-1) achieves ${S} _{21}$ and ${S} _{31}$ of −4.029 and −4.008 dB, respectively, at 33 GHz. The corresponding AI and PD are −0.021 dB and 0.369°, respectively. Moreover, the second divider (divider-2) achieves ${S} _{21}$ and ${S} _{31}$ of −4.093 and −4.055 dB, respectively, at 33 GHz. The corresponding AI and PD are −0.038 dB and 0.148°, respectively. The chip area is $1.7\times 10^{-4} \lambda _{0}^{2}$ , one of the smallest normalized chip area ever reported for millimeter-wave (mm-wave) dividers. The prominent results of the dividers indicate that they are suitable for power division/combination in mm-wave transceivers.
更新日期:2020-03-16

 

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