Abstract Tremendous interest has been placed on the atomic layer deposition (ALD) process as a thin film deposition technique capacity to deposit quality thin films. However, further comprehension of the ALD process is mandatory to increase the probability of achieving the necessary improvement, which can have a substantial impact on devices’ requiring properties that involve size, performance, and durability. It has been reported that pressure tends to impact growth per cycle. However, little has been done to investigate the specific effects of the – operating pressure on the mechanistic, species transport and reaction rates. Moreover, the effect of these prior properties due to complex topology elements, such as micro-trenches, has rarely been investigated. Hence, this study focuses on numerically investigating the effect between 1 and 10 Torr operating pressure along the ALD process using the computational fluid dynamic approach. A two-dimensional numerical simulation producing Al2O3 ALD thin film over a surface with micro-trenches is studied. Trimethyl-Aluminium and Ozone were utilized as the metal and oxidation source reactants. To assist in the precursor reaction process, a 2.5 s exposure time is added within the ALD sequence. The findings illustrated the fluid flow velocity, surface coverage, mass fraction, deposition rate and growth of the thin-film process.

中文翻译：

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操作压力对微沟槽在曝光时间引入原子层沉积的影响

摘要 原子层沉积 (ALD) 工艺作为一种能够沉积高质量薄膜的薄膜沉积技术引起了极大的兴趣。然而，必须进一步了解 ALD 工艺以增加实现必要改进的可能性，这可能会对涉及尺寸、性能和耐用性的器件要求属性产生重大影响。据报道，压力往往会影响每个周期的增长。然而，很少有人研究操作压力对机械、物质传输和反应速率的具体影响。此外，由于复杂拓扑元素（例如微沟槽）导致的这些先验特性的影响很少被研究。因此，这项研究的重点是使用计算流体动力学方法对沿 ALD 工艺的 1 到 10 Torr 工作压力之间的影响进行数值研究。研究了在具有微沟槽的表面上产生 Al2O3 ALD 薄膜的二维数值模拟。三甲基铝和臭氧被用作金属和氧化源反应物。为了协助前体反应过程，在 ALD 序列中增加了 2.5 秒的曝光时间。研究结果说明了薄膜过程的流体流速、表面覆盖率、质量分数、沉积速率和生长。三甲基铝和臭氧被用作金属和氧化源反应物。为了协助前体反应过程，在 ALD 序列中增加了 2.5 秒的曝光时间。研究结果说明了薄膜过程的流体流速、表面覆盖率、质量分数、沉积速率和生长。三甲基铝和臭氧被用作金属和氧化源反应物。为了协助前体反应过程，在 ALD 序列中增加了 2.5 秒的曝光时间。研究结果说明了薄膜过程的流体流速、表面覆盖率、质量分数、沉积速率和生长。