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One-pot solvothermal method to fabricate 1D-VS4 nanowires as anode materials for lithium ion batteries
Inorganic Chemistry Communications ( IF 3.8 ) Pub Date : 2020-05-01 , DOI: 10.1016/j.inoche.2020.107883
Yingfeng Dong , Xiao-qing Du , Pei Liang , Xiao-lei Man

Abstract 1D-VS4 nanorods have been successfully fabricated through a simple facial solvothermal method for the first time. SEM, Raman spectrum, FTIR and UV–vis are adopted to investigate the morphology, structure and composition of prepared nanocomposites, and results show that obtained VS4 is presented as uniform nanorods and is mainly composed by monoclinic VS4 with high crystallinity and purity. Moreover, these prepared VS4 nanorods have a uniform morphology as well as a small crystal size of 1–2 µm and a diameter of 20–60 nm. Electrochemical properties of VS4 nanorods as anode electrodes have shown VS4 is great in electrical conductivity, rate performance and service life. The first discharge has its specific capacity reaching 574.3 mAh g−1 at the current density of 200 mA g−1, and the reversible residual specific capacity could be retained to 439.3 mAh g−1 after 120 cycles. When current density is increased to 2 A g−1, the remaining capacity still remained as 267.3 mAh g−1, indicating good conductivity and excellent rate performance in VS4 based LIB. The small internal impedance (100 O) also indicates that the VS4 nanorod anode has a high conductivity, thus its superior electrochemical performance is promoted. Finally, we have carried out DFT calculations to explain how Li ions have been inserted into bulk and 1D-VS4 nanorods; and the fast Li ion migration in the 1D-VS4 nanorods with the NEB barrier is only 138.5 meV, and also the strong absorption ensures its excellent electrochemical performance.

中文翻译:

一锅溶剂热法制备1D-VS4纳米线作为锂离子电池负极材料

摘要 1D-VS4 纳米棒首次通过简单的面部溶剂热法成功制备。采用SEM、Raman光谱、FTIR和UV-vis对制备的纳米复合材料的形貌、结构和组成进行研究,结果表明所得VS4呈均匀的纳米棒状,主要由结晶度和纯度较高的单斜VS4组成。此外,这些制备的 VS4 纳米棒具有均匀的形态以及 1-2 µm 的小晶体尺寸和 20-60 nm 的直径。VS4 纳米棒作为阳极的电化学性能表明,VS4 在导电性、倍率性能和使用寿命方面都非常出色。在200 mA g-1的电流密度下,第一次放电的比容量达到574.3 mAh g-1,120 次循环后,可逆剩余比容量可保持在 439.3 mAh g-1。当电流密度增加到 2 A g-1 时,剩余容量仍为 267.3 mAh g-1,表明基于 VS4 的 LIB 具有良好的导电性和优异的倍率性能。较小的内阻抗(100 O)也表明VS4纳米棒阳极具有高电导率,从而促进了其优越的电化学性能。最后,我们进行了 DFT 计算来解释锂离子是如何插入块状和 1D-VS4 纳米棒中的;具有 NEB 势垒的 1D-VS4 纳米棒中的快速锂离子迁移仅为 138.5 meV,并且强吸收确保了其优异的电化学性能。3 mAh g-1,表明基于 VS4 的 LIB 具有良好的导电性和优异的倍率性能。较小的内阻抗(100 O)也表明VS4纳米棒阳极具有高电导率,从而促进了其优越的电化学性能。最后,我们进行了 DFT 计算来解释锂离子是如何插入块状和 1D-VS4 纳米棒中的;具有 NEB 势垒的 1D-VS4 纳米棒中的快速锂离子迁移仅为 138.5 meV,并且强吸收确保了其优异的电化学性能。3 mAh g-1,表明基于 VS4 的 LIB 具有良好的导电性和优异的倍率性能。较小的内阻抗(100 O)也表明VS4纳米棒阳极具有高电导率,从而促进了其优越的电化学性能。最后,我们进行了 DFT 计算来解释锂离子是如何插入块状和 1D-VS4 纳米棒中的;具有 NEB 势垒的 1D-VS4 纳米棒中的快速锂离子迁移仅为 138.5 meV,强吸收确保了其优异的电化学性能。我们已经进行了 DFT 计算来解释锂离子是如何插入到块状和 1D-VS4 纳米棒中的;具有 NEB 势垒的 1D-VS4 纳米棒中的快速锂离子迁移仅为 138.5 meV,并且强吸收确保了其优异的电化学性能。我们已经进行了 DFT 计算来解释锂离子是如何插入到块状和 1D-VS4 纳米棒中的;具有 NEB 势垒的 1D-VS4 纳米棒中的快速锂离子迁移仅为 138.5 meV,并且强吸收确保了其优异的电化学性能。
更新日期:2020-05-01
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