Abstract Silicon thin films were prepared by Laser Ablation technique onto fused quartz substrates. The effect of thermal annealing on the silicon films and the pressure and temperature dependence show an unusual behavior of photoluminescence (PL) spectra of the silicon (Si) thin films. An intense PL energy band around 3.0 eV (400 nm) was observed at room temperature after thermal annealing. Raman spectra of the samples showed an asymmetric peak shifted to 517 cm−1, in comparison with the crystalline Si optical phonon at 520 cm−1; a broadening (7 cm−1) of the phonon line is also observed. These results agree quiet well with the relaxation of the q-vector selection rules for the Raman active optical phonons. The red-shifted asymmetric Raman line shape was fitted by using the phonon-confinement model, in order to estimate the size of the particles constituting the films.

中文翻译：

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激光烧蚀生长的硅薄膜的光致发光和拉曼光谱

摘要 采用激光烧蚀技术在熔融石英衬底上制备了硅薄膜。热退火对硅膜的影响以及压力和温度依赖性显示出硅 (Si) 薄膜的光致发光 (PL) 光谱的异常行为。热退火后在室温下观察到约 3.0 eV (400 nm) 的强 PL 能带。与 520 cm-1 处的晶体硅光学声子相比，样品的拉曼光谱显示不对称峰移至 517 cm-1；还观察到声子线的加宽（7 cm-1）。这些结果与拉曼有源光学声子的 q 向量选择规则的放宽非常吻合。使用声子约束模型拟合红移不对称拉曼线形状，