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Surface Initiated Polymer Thin Films for the Area Selective Deposition and Etching of Metal Oxides.
ACS Nano ( IF 17.1 ) Pub Date : 2020-03-13 , DOI: 10.1021/acsnano.9b09637
Thomas G Pattison 1 , Alexander E Hess 2 , Noel Arellano 2 , Nicholas Lanzillo 3 , Son Nguyen 4 , Holt Bui 2 , Charles Rettner 2 , Hoa Truong 2 , Alexander Friz 2 , Teya Topuria 2 , Anthony Fong 2 , Brian Hughes 2 , Andy T Tek 2 , Anuja DeSilva 4 , Robert D Miller 2 , Greg G Qiao 1 , Rudy J Wojtecki 2
Affiliation  

The area selective growth of polymers and their use as inhibiting layers for inorganic film depositions may provide a valuable self-aligned process for fabrication. Polynorbornene (PNB) thin films were grown from surface-bound initiators and show inhibitory properties against the atomic layer deposition (ALD) of ZnO and TiO2. Area selective control of the polymerization was achieved through the synthesis of initiators that incorporate surface-binding ligands, enabling their selective attachment to metal oxide features versus silicon dielectrics, which were then used to initiate surface polymerizations. The subsequent use of these films in an ALD process enabled the area selective deposition (ASD) of up to 39 nm of ZnO. In addition, polymer thickness was found to play a key role, where films that underwent longer polymerization times were more effective at inhibiting higher numbers of ALD cycles. Finally, while the ASD of a TiO2 film was not achieved despite blanket studies showing inhibition, the ALD deposition on polymer regions of a patterned film produced a different quality metal oxide and therefore altered its etch resistance. This property was exploited in the area selective etch of a metal feature. This demonstration of an area selective surface-grown polymer to enable ASD and selective etch has implications for the fabrication of both micro- and nanoscale features and surfaces.

中文翻译:

用于金属氧化物的区域选择性沉积和蚀刻的表面引发的聚合物薄膜。

聚合物的区域选择性生长及其作为无机膜沉积的抑制层的用途可提供有价值的自对准制造工艺。聚降冰片烯(PNB)薄膜由表面结合的引发剂生长而成,并具有抑制ZnO和TiO2原子层沉积(ALD)的性能。通过合成引入了表面结合配体的引发剂,可以实现对聚合区域的选择性控制,从而使它们与金属电介质(相对于硅电介质)选择性连接,然后用于引发表面聚合。这些膜在ALD工艺中的后续使用使得能够进行高达39 nm的ZnO的区域选择性沉积(ASD)。另外,发现聚合物厚度起着关键作用,其中经历更长聚合时间的薄膜在抑制更高数量的ALD循环方面更有效。最后,尽管尽管全面研究显示出抑制作用,但仍未获得TiO2膜的ASD,但在图案化膜的聚合物区域上的ALD沉积产生了质量不同的金属氧化物,因此改变了其耐蚀性。该特性被用于金属特征的区域选择性蚀刻中。能够进行ASD和选择性刻蚀的区域选择性表面生长聚合物的这一演示对微米级和纳米级特征以及表面的制造都具有影响。在图案化膜的聚合物区域上的ALD沉积产生了质量不同的金属氧化物,因此改变了其抗蚀刻性。该特性被用于金属特征的区域选择性蚀刻中。能够进行ASD和选择性刻蚀的区域选择性表面生长聚合物的这一演示对微米级和纳米级特征以及表面的制造都具有影响。在图案化膜的聚合物区域上的ALD沉积产生了质量不同的金属氧化物,因此改变了其抗蚀刻性。该特性被用于金属特征的区域选择性蚀刻中。能够进行ASD和选择性刻蚀的区域选择性表面生长聚合物的这一演示对微米级和纳米级特征以及表面的制造都具有影响。
更新日期:2020-03-13
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