Quaternary chalcogenide Cu₂FeSnS₄ (CFTS) thin layers have been grown by spray pyrolysis technique on glass substrates using different substrate temperatures (T_s = 160, 200, 240 and 280 °C). Physical properties of CFTS thin films were investigated by X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), Energy dispersive X-ray spectroscopy (EDS), spectrophotometer and Hall Effect. All results suggest that CFTS thin film synthesized at T_s = 240 °C has the best physical properties. XRD indicates an enhancement of crystalline quality of stannite CFTS elaborated at T_s = 240 °C with a maximum grain size about 45 nm and Raman spectroscopy confirms the purity phase of optimum sample. At T_s = 240 °C, atomic ratios of Cu/Fe/Sn/S were close to the theoretical ratios 2/1/1/4 and SEM images illustrates that the surface of the film is covered from a large number of micro-aggregates with spherical form. It is found that energy band gap and absorption coefficient values were about 1.46 eV and 9.8 10⁴ cm⁻¹ respectively at T_s = 240 °C. Hall Effect measurements revealed that electrical resistivity of optimum sample decreased to 0.18 Ωcm. Thus, all experimental results demonstrate that CFTS thin film grown at T_s = 240 °C can be considered as a promising absorber material in solar cell devices. A higher photodegradation rate of MB was about 81% under sun light for 4 h which indicates that optimum CFTS thin film grown at T_s = 240 °C would be a cheaper alternative catalyst to replace TiO₂ in photocatalysis applications.

通过喷雾热解技术，使用不同的基板温度（T _s  = 160、200、240和280°C），在玻璃基板上生长了四级硫族化物Cu ₂ FeSnS ₄（CFTS）薄层。CFTS薄膜的物理性质通过X射线衍射（XRD），拉曼光谱，扫描电子显微镜（SEM），能量色散X射线光谱（EDS），分光光度计和霍尔效应进行了研究。所有结果表明，在T _s  = 240°C下合成的CFTS薄膜具有最佳的物理性能。X射线衍射表明，在T _s  = 240°C时合成的亚锡CFTS的晶体质量有所提高，最大晶粒尺寸约为45 nm，拉曼光谱证实了最佳样品的纯度。在T_s  = 240°C，Cu / Fe / Sn / S的原子比接近理论比2/1/1/4，并且SEM图像表明，薄膜表面被大量的微聚集体覆盖。球形。发现在T _s  = 240℃时，能带隙和吸收系数值分别为约1.46 eV和9.8 10 ⁴  cm ^-1。霍尔效应测量表明，最佳样品的电阻率降至0.18Ωcm。因此，所有实验结果表明CFTS薄膜在T _s处生长 = 240°C可以认为是太阳能电池设备中一种很有希望的吸收材料。MB在阳光下持续4 h的较高的光降解率约为81％，这表明在T _s  = 240°C下生长的最佳CFTS薄膜将是在光催化应用中替代TiO ₂的廉价替代催化剂。