Diluted magnetic semiconductors including Mn-doped GaAs are attractive for gate-controlled spintronics but Curie transition at room temperature with long-range ferromagnetic order is still debatable to date. Here, the room-temperature ferromagnetic domains with long-range order in semiconducting V-doped WSe2 monolayer synthesized by chemical vapor deposition are reported. Ferromagnetic order is manifested using magnetic force microscopy up to 360 K, while retaining high on/off current ratio of ≈105 at 0.1% V-doping concentration. The V-substitution to W sites keeps a V-V separation distance of 5 nm without V-V aggregation, scrutinized by high-resolution scanning transmission electron microscopy. More importantly, the ferromagnetic order is clearly modulated by applying a back-gate bias. The findings open new opportunities for using 2D transition metal dichalcogenides for future spintronics.

中文翻译：

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单层WSe2半导体中通过钒掺杂剂在室温下的铁磁有序。

包括Mn掺杂的GaAs的稀释磁半导体对于栅极控制的自旋电子器件很有吸引力，但迄今为止，室温下具有长距离铁磁序的居里跃迁仍然值得商bat。在此，报道了通过化学气相沉积法合成的半导体掺杂V的WSe 2单层半导体中具有长程有序的室温铁磁畴。使用磁力显微镜可显示高达360 K的铁磁有序，同时在0.1％的V掺杂浓度下仍保持约105的高开/关电流比。V位向W位的替换保持了5 nm的VV分离距离，而没有VV聚集，这是通过高分辨率扫描透射电子显微镜进行检查的。更重要的是，通过施加背栅偏置可以明显地调制铁磁阶数。