Abstract

Doping control has been a key challenge for electronic applications of van der Waals materials. Here, we demonstrate complementary doping of black phosphorus using controlled ionic intercalation to achieve monolithic building elements. We characterize the anisotropic electrical transport as a function of ion concentrations and report a widely tunable resistivity up to three orders of magnitude with characteristic concentration dependence corresponding to phase transitions during intercalation. As a further step, we develop both p-type and n-type field effect transistors as well as electrical diodes with high device stability and performance. In addition, enhanced charge mobility from 380 to 820 cm²/(V·s) with the intercalation process is observed and explained as the suppressed neutral impurity scattering based on our ab initio calculations. Our study provides a unique approach to atomically control the electrical properties of van der Waals materials, and may open up new opportunities in developing advanced electronics and physics platforms.

中文翻译：

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通过控制插入对单片集成电子产品进行范德华材料的互补掺杂

摘要

掺杂控制一直是范德华材料在电子应用中的关键挑战。在这里，我们演示了使用受控离子插层实现整体建筑元素的黑磷的互补掺杂。我们将各向异性电输运表征为离子浓度的函数，并报告了高达三个数量级的广泛可调的电阻率，其特征浓度依赖性对应于插层过程中的相变。下一步，我们将开发具有高器件稳定性和性能的p型和n型场效应晶体管以及电二极管。此外，电荷迁移率从380 cm ²提高到820 cm ²观察到/（V·s）随插层过程的变化，并根据我们的从头算算来解释为被抑制的中性杂质散射。我们的研究提供了一种独特的方法来原子地控制范德华材料的电性能，并可能为开发先进的电子和物理平台开辟新的机会。