Abstract Process and configuration dependent carrier-selective Ag/ITO/MoOx/n-Si/LiFx/Al silicon solar cells having conversion efficiencies from 6.5% to 14.5% are investigated. Some of the cells’ anomalous characteristics in light J-V and Suns-VOC graphs are analysed by photo-induced capacitance-voltage (C-V), impedance spectroscopy (IS), and voltage- plus light-biased (white, blue and infrared) quantum efficiency (QE). Correlated analysis of cells revealed the physical origin of S-shape in light J-V and turnaround in Suns-VOC graphs. After air exposure of the MoOx film, the charge carrier accumulation at the front interface and inefficient transport through the MoOx layer have led to the anomalous features in light J-V and Suns-VOC graphs of the cell. This is reflected as an additional peak and arc in C-V and IS graphs, respectively. In the absence of the LiFx layer, the cell has shown the only turnaround in Suns-VOC graph due to the Schottky barrier. The IS analysis resolved carrier transport issues at the front junction and back contact of the cells with a distinguished response. The light-bias dependent QE analysis has confirmed the presence of carrier collection barrier at the MoOx/c-Si interface, and the Schottky contact at the back with a different response in EQE spectra.

中文翻译：

---

载流子选择性接触硅太阳能电池的 JV 异常行为和 Suns-Voc 特性研究

摘要 研究了转换效率为 6.5% 至 14.5% 的工艺和配置相关的载流子选择性 Ag/ITO/MoOx/n-Si/LiFx/Al 硅太阳能电池。通过光致电容电压 (CV)、阻抗谱 (IS) 和电压加偏光（白光、蓝光和红外）量子效率分析光 JV 和 Suns-VOC 图中的一些细胞异常特征（量化宽松）。细胞的相关分析揭示了轻型合资企业中 S 形的物理起源和 Suns-VOC 图中的转变。MoOx 薄膜暴露在空气中后，前界面的电荷载流子积累和通过 MoOx 层的低效传输导致电池的光 JV 和 Suns-VOC 图中出现异常特征。这分别反映为 CV 和 IS 图中的附加峰和弧。在没有 LiFx 层的情况下，由于肖特基势垒，电池在 Suns-VOC 图中显示出唯一的转变。IS 分析解决了细胞前连接处和后接触处的载流子传输问题，并具有显着的响应。依赖光偏压的 QE 分析证实了 MoOx/c-Si 界面处存在载流子收集势垒，并且背面的肖特基接触在 EQE 光谱中具有不同的响应。