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Effects of post bonding annealing on GaAs//Si bonding interfaces and its application for sacrificial-layer-etching based multijunction solar cells
Solar Energy Materials and Solar Cells ( IF 6.9 ) Pub Date : 2020-06-01 , DOI: 10.1016/j.solmat.2020.110501
Naoteru Shigekawa , Ryo Kozono , Sanji Yoon , Tomoya Hara , Jianbo Liang , Akira Yasui

Abstract By using the sacrificial layer (SL) etching, GaAs substrates are separated from III–V epi substrate//Si substrate junctions that are made by surface activated bonding (SAB) technologies. The post-bonding low-temperature (300- ∘ C) annealing plays an essential role in achieving a promising ( ∼ 90%) bonding yield. The effects of the post-bonding annealing are investigated by hard X-ray photoemission spectroscopy and current–voltage measurements of GaAs//Si bonding interfaces. It is found that the concentration of oxygen atoms at interfaces is reduced and the resistance decreases to 1.6–2.1 m Ω cm 2 by the low-temperature annealing. Aluminum fluoride complexes are not observed by X-ray photoelectron spectroscopy on the exposed surfaces of separated GaAs substrates. The roughness average of the surfaces is ≈ 0.25–0.30 nm. The characteristics of double junction cells fabricated on the GaAs//Si junctions prepared by the SL etching are almost the same as those of cells fabricated by dissolving GaAs substrates after bonding. These results indicate that multijunction cells could be fabricated in a process sequence compatible with reuse of GaAs substrates by combining the SL etching and SAB.

中文翻译:

键合后退火对GaAs//Si键合界面的影响及其在牺牲层蚀刻基多结太阳能电池中的应用

摘要 通过使用牺牲层 (SL) 蚀刻,GaAs 衬底与通过表面活化键合 (SAB) 技术制成的 III-V 族外延衬底//Si 衬底结分离。键合后低温 (300-∘ C) 退火在实现有希望的 (~ 90%) 键合产率方面起着至关重要的作用。通过硬 X 射线光电子能谱和 GaAs//Si 键合界面的电流-电压测量来研究键合后退火的影响。发现通过低温退火,界面处的氧原子浓度降低,电阻降低至1.6-2.1 m Ω cm 2 。X 射线光电子能谱在分离的 GaAs 衬底的暴露表面上没有观察到氟化铝配合物。表面的粗糙度平均值约为 0.25–0.30 nm。在通过SL蚀刻制备的GaAs//Si结上制造的双结电池的特性与通过键合后溶解GaAs衬底制造的电池的特性几乎相同。这些结果表明,通过结合 SL 蚀刻和 SAB,可以在与 GaAs 衬底的再利用兼容的工艺顺序中制造多结电池。
更新日期:2020-06-01
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