Abstract The impact of random dopant fluctuation (RDF), work function variation (WFV) and oxide thickness fluctuation (OTF) on the statistical variability of the electrical performance of non-uniformly doped bulk junctionless (JL) FinFET has been studied using three dimensional TCAD simulations. We illustrate that by specifying the appropriate doping profile in the bulk JL FinFET, enhanced statistical variability and electrical characteristics can be achieved. Numerically, it is indicated by values of standard deviation of device parameters, that the performance parameters of a uniformly doped bulk JL FinFET are seriously influenced by statistical variation compared to its non-uniformly doped counterparts.

中文翻译：

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非均匀掺杂体无结FinFET的统计变异性研究

摘要 使用三维 TCAD 研究了随机掺杂波动 (RDF)、功函数变化 (WFV) 和氧化物厚度波动 (OTF) 对非均匀掺杂体无结 (JL) FinFET 电性能统计变化的影响。模拟。我们说明，通过在体 JL FinFET 中指定适当的掺杂分布，可以实现增强的统计可变性和电气特性。在数值上，通过器件参数的标准偏差值表明，与其非均匀掺杂的对应物相比，均匀掺杂的体 JL FinFET 的性能参数受到统计变化的严重影响。