Recently, complex oxides have been shown to be promising candidate in dielectric materials of resistive random access memory (RRAM). However, the detailed switching information of complex oxide RRAM is still insufficient, and direct observation of the whole switching process is required to figure out the mechanism. In this study, we deposited SrCoO_x (SCO) on a niobium-doped SrTiO₃ substrate as the dielectric layer via pulsed laser deposition (PLD). The novel SCO device possesses excellent RRAM properties, high cycling endurance, a long data retention time, and uniform distributions of the high resistance state (HRS) and low resistance state (LRS) resistance and Set/Reset voltage. Furthermore, the switching mechanism was investigated by using transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM), which showed that the switching behavior resulted from the topotactic phase transformation. In addition, the whole switching process was observed through in situ TEM, and the results strengthened the findings of the ex situ experiment. The discussion of this switching behavior provides support for a novel aspect of the RRAM switching mechanism and also a new option for the dielectric material in RRAM.

最近，复合氧化物已被证明是电阻性随机存取存储器（RRAM）的介电材料中有希望的候选物。但是，复杂氧化物RRAM的详细开关信息仍然不够，需要直接观察整个开关过程以找出机理。在这项研究中，我们在掺铌的SrTiO ₃上沉积了SrCoO _x（SCO）。通过脉冲激光沉积（PLD）将基板作为介电层。新型SCO器件具有出色的RRAM特性，高循环寿命，较长的数据保留时间以及高电阻状态（HRS）和低电阻状态（LRS）电阻以及设置/复位电压的均匀分布。此外，利用透射电子显微镜（TEM）和扫描透射电子显微镜（STEM）研究了开关机理，结果表明，开关行为是由全能相变引起的。此外，通过观察整个切换过程原位透射电镜，结果加强了的结果易地实验。对这种切换行为的讨论为RRAM切换机制的新颖方面提供了支持，也为RRAM中的介电材料提供了新的选择。